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Product Detailed Parameters
- Description：IGBT 600V 34A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：34 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：1.6V @ 15V, 18A
- Power - Max：100 W
- Switching Energy：260µJ (on), 3.45mJ (off)
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：22ns/540ns
- Test Condition：480V, 18A, 23Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRG4BC30SPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-220-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 34 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 1.84 V, a gate-emitter leakage current of 100 nA, and a power dissipation rating of 100 W. The component operates within a temperature range of -55°C to +150°C.
Feature Summary
- Standard input type configuration for general-purpose switching applications
- Single transistor design integrated into a robust TO-220-3 leaded package
Applications
- DC to AC conversion circuits
- Motor drive systems
- Power supply implementations
Procurement Notes
Verify the specific suffix designation against official manufacturer documentation to confirm exact electrical characteristics and packaging specifications. Confirm RoHS compliance status directly with the supplier or original datasheet before integration. Ensure that the procurement channel provides traceable origin records to mitigate counterfeit risks during acquisition.
Selection Notes
Select this component when a standard IGBT with 600V blocking capability and approximately 34A continuous current handling is required. The TO-220-3 package facilitates manual assembly and heatsink mounting. Evaluate thermal management requirements based on the 100W power dissipation limit and the 1.84V saturation voltage under expected load conditions.
Part Context
This discrete IGBT belongs to the broader family of Infineon power transistors designed for medium-power electronic conversions. It serves as a fundamental switching element in power electronics, distinct from integrated modules or MOSFET alternatives. The component supports standard industrial voltage levels and current ratings typical for legacy and modern power designs.
Replacement Considerations
Consult official Infineon substitution guides for verified equivalents. Cross-compatibility depends on matching voltage, current, and package constraints. Verify pinout alignment and thermal resistance values before implementing any alternative part number in existing circuit layouts.
