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The IRG4BC40FPbF is a single N-channel IGBT in a TO-220AB package. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current of 54 A at 25°C. The device has a maximum power dissipation of 198 W, a saturated collector-emitter voltage of 2.1 V at 54 A, and a total gate charge of 53 nC. Operating temperatures range from -55°C to +150°C.
Verify the exact part number suffix against official Infineon documentation to confirm lead-free status and specific thermal or electrical variants. Confirm RoHS compliance requirements match your manufacturing standards. Check for any recent product discontinuation notices or lifecycle changes directly from the manufacturer before finalizing procurement plans.
Select this component when a 600V rating and 54A continuous current capability are required in a through-hole package. Ensure the application's thermal management can handle up to 198W of power dissipation. Verify that the gate drive circuitry aligns with the specified 53nC total gate charge for optimal switching speeds.
This discrete IGBT belongs to Infineon's Fast IGBT family, designed for medium-power applications. It combines the high input impedance of a MOSFET with the low on-state voltage drop of a bipolar transistor. The integrated anti-parallel diode simplifies circuit design for inductive loads.
IRG4BC40KPBF