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Product Detailed Parameters
- Description：ULTRAFAST SPEED IGBT
- Series：*
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：-
- Current - Collector (Ic) (Max)：-
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：-
- Power - Max：-
- Switching Energy：-
- Input Type：-
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：-
- Package / Case：-
- Supplier Device Package：-
- Grade：-
- Qualification：-
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Overview
The IRG4BC40UPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a 600V collector-emitter voltage rating and a continuous collector current of 42A at 25°C. The device utilizes an ultrafast switching design optimized for high-frequency operation between 8kHz and 40kHz in hard-switching applications. Key electrical parameters include a typical saturation voltage of 1.72V at 15V gate drive and 20A collector current, with a maximum power dissipation of 160W. It is housed in a TO-220-3 package designed for through-hole mounting.
Feature Summary
- Generation 4 IGBT architecture providing tighter parameter distribution and higher efficiency compared to previous generations.
- Ultrafast switching characteristics optimized for high operating frequencies up to 40kHz in hard-switching modes.
- Industry-standard TO-220AB flange mount package facilitating straightforward integration into existing thermal management designs.
Applications
- High-frequency motor drives
- Uninterruptible Power Supplies (UPS)
- Switch-mode power supplies (SMPS)
Procurement Notes
Verify the exact suffix configuration against the manufacturer's official datasheet, as variations such as 'P' or 'U' may indicate differences in packaging or specific product line revisions. Confirm RoHS compliance status directly with the supplier documentation. Ensure the component matches the required pinout and thermal specifications for the target application before finalizing procurement orders.
Selection Notes
Select this component for applications requiring efficient switching at frequencies above 20kHz. The low saturation voltage contributes to reduced conduction losses, making it suitable for medium-power inverters. Evaluate the thermal resistance requirements of the TO-220 package to ensure adequate heat sinking is available for the specified 160W power dissipation limit under worst-case operating conditions.
Part Context
This part belongs to Infineon's BC series of ultrafast IGBTs, which are engineered for general-purpose industrial and consumer power electronics. The Generation 4 technology represents a significant evolution in silicon performance, offering improved robustness and switching speed over earlier iterations. It serves as a discrete alternative to integrated modules in lower-power density systems.
Replacement Considerations
Direct cross-replacement requires matching the 600V/40A+ rating and TO-220 package. Verify that any substitute maintains comparable switching times and saturation voltage characteristics to preserve circuit efficiency. Consult official replacement guides from manufacturers like Mitsubishi or Fuji Electric for equivalent ultrafast IGBTs if the original part is unavailable.
