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The IRG4CC50UB is a silicon Insulated Gate Bipolar Transistor (IGBT) die manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 55 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2 V and supports a power dissipation of 200 W. Designed for through-hole mounting, it operates within a temperature range of -55°C to +175°C junction temperature. This component belongs to the UltraFast series, optimized for switching frequencies between 8-60 kHz.
Verify end-of-life status before design finalization as this part may be discontinued. Confirm RoHS compliance requirements with the manufacturer's latest documentation. Ensure that the selected gate driver circuitry matches the specific switching characteristics of this IGBT die to prevent overstress. Validate thermal management solutions against the specified power dissipation limits under actual operating conditions.
Select this component for designs requiring a 600V rated IGBT die with high current handling capabilities. Consider the TO-247 package equivalent or bare die integration depending on the module architecture. Evaluate the switching speed compatibility with the intended control frequency range. Ensure the application environment stays within the specified operating temperature extremes for reliable long-term performance.
This IGBT die is part of Infineon's broader portfolio of power semiconductors, specifically the UltraFast series. It shares technological lineage with other components in the IRG4xxUD family, offering similar electrical characteristics but potentially differing in packaging or specific parameter tolerances. It serves as a core switching element in medium-power industrial and consumer electronics applications.
Consult official replacement lists for direct substitutes. Cross-reference electrical parameters such as Vceo, Ic, and Vce(sat) when evaluating alternative dies from other manufacturers to ensure functional equivalence in the target circuit design.