IRG4CC50UB

IRG4CC50UB

$2.41
  • Description:IGBT DIE
  • Series:-

SKU:26a8cd473711 Category: Brand:

  
  • Quantity
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Product Detailed Parameters

  • Description:IGBT DIE
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Box
  • IGBT Type:-
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):55 A
  • Current - Collector Pulsed (Icm):-
  • Vce(on) (Max) @ Vge, Ic:2V @ 15V, 10A
  • Power - Max:-
  • Switching Energy:-
  • Input Type:Standard
  • Gate Charge:-
  • Td (on/off) @ 25°C:-
  • Test Condition:-
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-
  • Mounting Type:Through Hole
  • Package / Case:Die
  • Supplier Device Package:Die
  • Grade:-
  • Qualification:-

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IRG4CC50UB

Overview

The IRG4CC50UB is a silicon Insulated Gate Bipolar Transistor (IGBT) die manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a maximum continuous collector current of 55 A at 25°C. The device exhibits a collector-emitter saturation voltage of 2 V and supports a power dissipation of 200 W. Designed for through-hole mounting, it operates within a temperature range of -55°C to +175°C junction temperature. This component belongs to the UltraFast series, optimized for switching frequencies between 8-60 kHz.

Feature Summary

  • UltraFast switching technology designed for high-frequency applications
  • Robust thermal performance with 200 W power dissipation capability
  • Low saturation voltage for efficient conduction

Applications

  • Three-phase motor drive inverters
  • Switched-mode power supplies
  • Induction heating systems

Procurement Notes

Verify end-of-life status before design finalization as this part may be discontinued. Confirm RoHS compliance requirements with the manufacturer's latest documentation. Ensure that the selected gate driver circuitry matches the specific switching characteristics of this IGBT die to prevent overstress. Validate thermal management solutions against the specified power dissipation limits under actual operating conditions.

Selection Notes

Select this component for designs requiring a 600V rated IGBT die with high current handling capabilities. Consider the TO-247 package equivalent or bare die integration depending on the module architecture. Evaluate the switching speed compatibility with the intended control frequency range. Ensure the application environment stays within the specified operating temperature extremes for reliable long-term performance.

Part Context

This IGBT die is part of Infineon's broader portfolio of power semiconductors, specifically the UltraFast series. It shares technological lineage with other components in the IRG4xxUD family, offering similar electrical characteristics but potentially differing in packaging or specific parameter tolerances. It serves as a core switching element in medium-power industrial and consumer electronics applications.

Replacement Considerations

Consult official replacement lists for direct substitutes. Cross-reference electrical parameters such as Vceo, Ic, and Vce(sat) when evaluating alternative dies from other manufacturers to ensure functional equivalence in the target circuit design.

IRG4CC50UBIRG4CC50UB
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