IRG4CC80SB

Description：IGBT CHIP
Series：-

SKU:932549dc798b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT CHIP
Series：-
Mfr：Infineon Technologies
Package：Bulk
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：-
Current - Collector Pulsed (Icm)：-
Vce(on) (Max) @ Vge, Ic：-
Power - Max：-
Switching Energy：-
Input Type：Standard
Gate Charge：-
Td (on/off) @ 25°C：-
Test Condition：-
Reverse Recovery Time (trr)：-
Operating Temperature：-
Mounting Type：Surface Mount
Package / Case：Die
Supplier Device Package：Die
Grade：-
Qualification：-

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IRG4CC80SB

Overview

The IRG4CC80SB is a discrete IGBT from Infineon's Gen 4 HighSpeed 3 portfolio, designed for high-efficiency power switching. It features a maximum collector-emitter voltage of 600 V and an operating temperature range from -55 °C to 150 °C. The device utilizes TRENCHSTOP™ technology to achieve low conduction and switching losses, making it suitable for demanding industrial applications.

Feature Summary

Incorporates TRENCHSTOP™ technology for optimized switching performance
Designed for high efficiency in industrial power conversion systems
Capable of withstanding extended operating temperatures up to 150 °C

Applications

Industrial motor drives
High-frequency power supplies
Welding equipment

Procurement Notes

Verify the exact datasheet version and electrical characteristics directly from official Infineon documentation before design-in. Confirm that the specific package type and pinout match your PCB layout requirements. Ensure thermal management solutions are adequate for the intended operating conditions.

Selection Notes

Select this component when a 600 V rating and robust high-speed switching capability are required. Consider its compatibility with standard gate drivers and its suitability for applications prioritizing efficiency over extreme current handling. Evaluate thermal resistance parameters against your system's cooling capabilities.

Part Context

This part belongs to Infineon's Gen 4 discrete IGBT lineup, specifically the HighSpeed 3 series. These devices are engineered to balance switching speed and conduction loss, targeting applications where fast switching frequencies improve overall system efficiency and reduce passive component sizes.

Replacement Considerations

Consult official Infineon cross-reference guides for verified substitutes. Ensure any replacement maintains identical voltage ratings, package dimensions, and thermal characteristics to guarantee system compatibility.

How to buy

Online and offline orders are supported. If the item is available for online purchase, you can place it in the cart; for wholesale pricing, please contact our product manager for a quote.

Payment Method

Payment methods: T/T, WeChat Pay, credit cards, Google Pay, Apple Pay . Buyer covers shipping, fees, duties, and taxes; contact our product manager if you need a contract/procurement process.

Delivery time

In-stock items usually ship within 24 hours. Otherwise, shipment is arranged 1 to 2 days after the items arrive at our warehouse. Timing depends on destination and shipping method.

Freight calculation

Freight cost depends on destination, package size, and weight . We offer shipping options via DHL, FedEx, UPS, and TNT , and can ship using your freight account upon request.

Mode of Transportation

We ship via DHL, FedEx, UPS, and TNT. If you prefer a specific logistics provider, we can ship using your designated carrier.

Return and Refund

Returns are accepted within 60 days of invoice with RMA approval. Items must be resalable; original invoice and test report are required. No returns for customer errors.