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Product Detailed Parameters
- Description：IGBT 600V 20.3A TO220-FP
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20.3 A
- Current - Collector Pulsed (Icm)：120 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 17A
- Power - Max：45 W
- Switching Energy：630µJ (on), 1.39mJ (off)
- Input Type：Standard
- Gate Charge：51 nC
- Td (on/off) @ 25°C：42ns/230ns
- Test Condition：480V, 17A, 23Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：PG-TO220-FP
- Grade：-
- Qualification：-
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Overview
The IRG4IBC30FD is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current rating of 20.3 A at 25 °C. The device utilizes TO-220FP packaging for through-hole mounting. Key electrical parameters include a saturation voltage of approximately 1.8 V and a power dissipation capacity of 45 W. The component operates within a temperature range from -55 °C to +150 °C, utilizing silicon technology.
Feature Summary
- Single IGBT configuration designed for high-power switching applications
- TO-220FP full-pack package optimized for thermal management and board-level heat dissipation
- Silicon-based semiconductor construction ensuring robust performance in industrial environments
Applications
- Motor drive inverters
- Switch-mode power supplies
- Industrial control systems
Procurement Notes
Verify the specific lifecycle status and RoHS compliance details prior to procurement, as availability may vary across distributors. Confirm that the TO-220FP footprint matches the target PCB design requirements. Ensure gate drive voltage specifications align with the system's logic levels to prevent device damage or improper switching behavior during integration.
Selection Notes
Select this component when a 600 V blocking capability and moderate current handling are required in a standard through-hole form factor. Consider the thermal resistance characteristics inherent to the TO-220FP package for heat sink design. Evaluate the trade-off between the specified saturation voltage and switching losses against alternative packages if space constraints differ.
Part Context
This part belongs to Infineon's legacy IGBT portfolio, often associated with the International Rectifier brand heritage. It represents a discrete solution for medium-power conversion tasks where modular IGBTs are unnecessary. The device serves as a fundamental switching element in circuits requiring reliable DC-to-AC or AC-to-DC conversion capabilities.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Designers should consult official replacement guides or contact the manufacturer directly for cross-reference information regarding end-of-life transitions.
