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Product Detailed Parameters
- Description：IGBT 600V 17A TO220-FP
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：17 A
- Current - Collector Pulsed (Icm)：34 A
- Vce(on) (Max) @ Vge, Ic：2.7V @ 15V, 16A
- Power - Max：45 W
- Switching Energy：600µJ (on), 580µJ (off)
- Input Type：Standard
- Gate Charge：67 nC
- Td (on/off) @ 25°C：60ns/160ns
- Test Condition：480V, 16A, 23Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：PG-TO220-FP
- Grade：-
- Qualification：-
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Overview
The IRG4IBC30KD is an Insulated Gate Bipolar Transistor (IGBT) with a built-in ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a single configuration in a TO-220AB flange mount package. Key electrical parameters include a maximum collector-emitter voltage of 600 V and a continuous collector current of 17 A at 25°C. The device exhibits a maximum fall time of 120 ns and a gate-emitter threshold voltage of up to 6 V. The maximum operating temperature is rated at 150°C.
Feature Summary
- Integrated ultrafast soft recovery diode for efficient commutation
- Single IGBT configuration with isolated case connection
- Designed for high-speed switching applications
Applications
- High-frequency power conversion circuits
- Motor drive inverters
- Uninterruptible power supplies (UPS)
- Induction heating systems
Procurement Notes
Verify the specific suffix and packaging variant against the official datasheet before ordering. Confirm RoHS compliance status as indicated in the component documentation. Check for obsolescence notices or lifecycle changes directly from Infineon. Ensure the supplier provides authentic components with traceable origin. Validate thermal and electrical ratings match the target application requirements.
Selection Notes
Select this component for designs requiring integrated freewheeling diodes with fast recovery characteristics. Consider the TO-220AB package for through-hole mounting and flange heat dissipation. Evaluate the 600V rating against system voltage peaks. Assess the 17A current capability relative to load demands and thermal management constraints.
Part Context
This part belongs to the IRG4IBC series of IGBTs with integrated diodes. It represents a discrete power semiconductor solution from Infineon's portfolio, formerly associated with International Rectifier. The component is designed for medium-power switching applications where compact integration of transistor and diode functions is beneficial.
Replacement Considerations
Consult official cross-reference lists for verified substitutes. Ensure replacement parts match the 600V/17A specifications and TO-220AB package. Verify compatibility of pinout and thermal characteristics. Confirm that any alternative maintains similar switching speed and diode recovery performance.
