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The IRG4P254SPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 250 V and a continuous collector current rating of 98 A. The device is housed in a TO-247AC through-hole package, designed for high-power applications requiring robust thermal performance. With a power dissipation capacity of 200 W at 25°C, it supports efficient switching operations in medium-voltage circuits.
Verify component authenticity through authorized distributors or direct manufacturer channels. Confirm datasheet revisions and specific ordering suffixes to ensure compatibility with design requirements. Check for obsolescence status and available lifecycle information prior to final procurement decisions.
Select this component for applications requiring 250 V blocking capability and high surge current handling. Ensure the thermal design accommodates the specified power dissipation limits. Verify gate drive requirements match the IGBT's switching characteristics for optimal performance and reliability in the target circuit topology.
This part belongs to Infineon's IGBT portfolio, specifically designed for general-purpose power switching. It complements other devices in the series offering varying voltage and current ratings. The TO-247AC package is standard for high-power discrete semiconductors, facilitating easy mounting on heatsinks for effective heat removal in industrial environments.
Consult official replacement guides for equivalent parts with matching voltage and current ratings. Verify pinout compatibility and thermal resistance specifications before substituting. Cross-reference datasheets to ensure functional equivalence in the specific application context.