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The IRG4PC30K is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter maximum voltage of 600 V and a continuous collector current rating of 30 A at 25°C. The device utilizes silicon technology and is housed in a TO-247-3 through-hole package. Key electrical parameters include a collector-emitter saturation voltage of 2.9 V, a gate-emitter maximum voltage range of -20 V to 20 V, and a power dissipation capacity of 125 W. The component supports operating temperatures from -55°C to 150°C.
Verify the specific suffix designation against official Infineon documentation to confirm exact performance grades and RoHS compliance status. Confirm availability as this component may be subject to lifecycle changes or discontinuation notices. Ensure the procurement channel provides valid traceability and original manufacturer certification to prevent counterfeit components.
Select this component when a 600 V blocking capability and 30 A continuous current are required in a standard through-hole form factor. Consider the 2.9 V saturation voltage for conduction loss calculations and the 125 W power dissipation limit for thermal design. Verify that the switching frequency requirements align with the specified 8-25 kHz operational range for optimal efficiency.
This part belongs to the IRG4PC series of IGBTs from Infineon Technologies, designed for medium-power switching applications. The series typically integrates an anti-parallel diode to simplify circuit designs in half-bridge configurations. The TO-247-3 package is widely used in industrial power electronics due to its reliable mechanical mounting and heat dissipation characteristics.
Consult official cross-reference data for direct replacements such as the IRG4PC30KD or other variants within the same Infineon family. Verify pinout compatibility and electrical parameter equivalence before substitution.