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Product Detailed Parameters
- Description：IGBT 600V 49A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Bag
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：49 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：1.7V @ 15V, 27A
- Power - Max：160 W
- Switching Energy：370µJ (on), 1.81mJ (off)
- Input Type：Standard
- Gate Charge：100 nC
- Td (on/off) @ 25°C：26ns/240ns
- Test Condition：480V, 27A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG4PC40F is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 54 A at 25°C. The device utilizes an industry-standard TO-247AC package for through-hole mounting. Key electrical parameters include a typical saturation voltage of 1.93 V, a total gate charge of 48 nC, and a maximum power dissipation of 160 W. It is optimized for medium operating frequencies ranging from 1 to 5 kHz in hard switching applications.
Feature Summary
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
- Optimized specifically for medium operating frequencies suitable for hard switching and resonant mode applications.
- Utilizes the standard TO-247AC package to facilitate drop-in replacement for equivalent industry-standard Generation 3 devices.
Applications
- Induction heating systems
- Power supplies with isolated output
- DC-DC converters
Procurement Notes
Verify authenticity through authorized distributors or official Infineon channels. Confirm the specific suffix matches the required lead-free specifications. Ensure the component meets RoHS compliance standards relevant to your region. Cross-reference datasheet revisions to confirm electrical characteristics align with your design requirements before finalizing procurement.
Selection Notes
Select this component for designs requiring robust performance in medium-frequency switching environments. Evaluate thermal management capabilities based on the specified junction-to-case thermal resistance. Consider the gate charge characteristics when designing drive circuits to optimize switching losses. Verify that the TO-247AC footprint matches the existing PCB layout constraints.
Part Context
This part belongs to the Generation 4 IGBT family from Infineon Technologies. It represents an evolution from Generation 3 devices, offering improved efficiency and parameter consistency. The product line targets industrial power control applications where reliable switching and high current handling are critical.
Replacement Considerations
Designed as a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs. Verify pinout compatibility and thermal interface dimensions when substituting older models.
FAQ
What is the maximum operating frequency for this IGBT?
The device is optimized for medium operating frequencies, specifically between 1 and 5 kHz in hard switching modes.
Does this component support drop-in replacement for older models?
Yes, it is designed to be a drop-in replacement for equivalent industry-standard Generation 3 IR IGBTs.
What packaging style does this transistor use?
It uses the industry-standard TO-247AC package for through-hole installation.
