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The IRG4PC40K is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes UltraFast technology designed for switching frequencies between 8 kHz and 25 kHz. The device features a TO-247-3 through-hole package with a maximum collector-emitter voltage of 600 V and a continuous collector current of 42 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.6 V, gate-emitter voltage limits of ±20 V, and a power dissipation rating of 160 W. The component operates within a temperature range of -55°C to +150°C.
Verify the specific suffix against the datasheet, as the base model may have variants. Confirm RoHS compliance status and lead times with authorized distributors. Check for obsolescence notices or lifecycle changes directly from Infineon. Ensure the ordering part number matches the required package and pinout specifications for your design.
Select this component for applications requiring moderate switching speeds and high voltage handling. Evaluate thermal management requirements based on the 160 W dissipation rating and junction-to-case thermal resistance. Compare saturation voltage and switching losses against alternative IGBTs for efficiency optimization. Ensure the drive circuit can support the specified gate voltage limits.
This IGBT belongs to Infineon's UltraFast series, targeting industrial and consumer applications where switching speed and low conduction losses are critical. The TO-247-3 package provides mechanical robustness and efficient heat dissipation for through-hole mounting. It serves as a core switching element in power conversion topologies.
Consult official cross-reference lists for direct replacements. Verify that any substitute matches the 600 V rating, 42 A current capacity, and TO-247-3 package dimensions. Ensure equivalent switching characteristics and thermal performance.