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The IRG4PC40WPBF is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter voltage of 600 V and a continuous collector current of 40 A. The device has a maximum power dissipation rating of 160 W. Key switching parameters include an on-state switching energy of 110 µJ and an off-state switching energy of 230 µJ. The gate charge is specified as 98 nC, with turn-on and turn-off delay times defined at 25°C. The component utilizes the Warp technology for operation in the 60-150 kHz frequency range.
This component is officially classified as obsolete and is no longer manufactured by Infineon Technologies. Verification of availability should focus on existing stock from authorized distributors or secondary market suppliers. Substitution with equivalent active parts is recommended for new designs. Confirm datasheet revisions and pinout compatibility when sourcing replacements to ensure system integrity.
Select this IGBT for applications requiring 600 V blocking capability and 40 A current handling in through-hole assemblies. Consider the 160 W power dissipation limit and thermal management requirements for the TO-247AC package. Evaluate switching energies against the target operating frequency of 60-150 kHz to ensure efficiency meets design specifications.
The IRG4PC40WPBF belongs to Infineon's single IGBT product line, specifically utilizing Warp technology. It is housed in a TO-247AC through-hole package. This series targets medium-power industrial applications where robust switching performance and standard packaging are required.
The IGW20N60H3FKSA1 is listed as a similar substitute part number. Verify electrical parameters and pinout compatibility before replacement.
The device supports switching frequencies in the range of 60 to 150 kHz.
The total gate charge is specified as 98 nC.