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The IRG4PC60FPbF is a fast-speed Insulated Gate Bipolar Transistor (IGBT) utilizing TRENCHSTOP™ technology. It features a TO-247A package with an integrated diode and high efficiency. Key electrical parameters include a collector-emitter voltage of 600 V, continuous collector current of 60 A at 25°C, and power dissipation of 180 W. The saturation voltage is 1.95 V, gate charge is 130 nC, and switching losses are 2.6 mJ (Eoff) and 0.31 mJ (Eon).
Verify the specific ordering suffix against official Infineon documentation to confirm lead-free status and packaging type. Confirm that the component meets industrial qualification standards required for your design. Ensure compatibility with existing thermal management solutions given the specified power dissipation limits.
Select this component for designs requiring fast switching speeds within the 10 kHz to 20 kHz range. Consider the integrated diode for simplified circuit topology. Evaluate thermal resistance values against your heat sink capabilities to ensure operation within the maximum junction temperature limits under expected load conditions.
This device belongs to the IRG4 series of fast IGBTs from Infineon Technologies. It utilizes TRENCHSTOP™ technology to achieve low switching losses and high efficiency. The product is designed for industrial markets and offers a robust solution for power conversion applications requiring reliable performance.
Public confirmed substitute part numbers: None identified in verified source material.
The datasheet specifies suitability for frequencies up to 20 kHz in hard switching applications and up to 10 kHz in resonant mode applications.
Yes, it features an integrated second IGBT diode which contributes to higher efficiency and lower system cost.
At VCC=480V, IC=60A, TJ=25°C, and RG=5Ω, the total switching loss is approximately 2.91 mJ, comprising Eoff of 2.6 mJ and Eon of 0.31 mJ.