IRG4PH30KDPBF

Description：IGBT 1200V 20A TO-247AC
Series：-

SKU:56d11757da27 Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 20A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：20 A
Current - Collector Pulsed (Icm)：40 A
Vce(on) (Max) @ Vge, Ic：4.2V @ 15V, 10A
Power - Max：100 W
Switching Energy：950µJ (on), 1.15mJ (off)
Input Type：Standard
Gate Charge：53 nC
Td (on/off) @ 25°C：39ns/220ns
Test Condition：800V, 10A, 23Ohm, 15V
Reverse Recovery Time (trr)：50 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG4PH30KDPBF

Overview

The IRG4PH30KDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 20 A at 25°C. The device utilizes a TO-247AC through-hole package with a power dissipation rating of 100 W. It operates within a temperature range of -55°C to +150°C junction temperature.

Feature Summary

Co-packaged with HEXFRED ultrafast, ultrasoft recovery antiparallel diodes for minimized switching losses.
Optimized for high short circuit tolerance suitable for motor control applications.
Combines low conduction losses with high switching speed characteristics.

Applications

Motor control systems
High efficiency power conversion
Industrial inverter circuits

Procurement Notes

Verify component authenticity against official Infineon documentation due to the discontinued status. Confirm that the specific suffix corresponds to the lead-free PBF designation. Ensure compatibility with existing thermal management designs given the 100 W dissipation limit in the TO-247AC package.

Selection Notes

Select this component when designing circuits requiring 1200 V blocking capability with integrated fast recovery diodes. Consider the 20 A current rating and 10 µs short circuit withstand time for robust motor drive implementations. Evaluate thermal resistance requirements for the TO-247AC package in the final assembly.

Part Context

This IGBT belongs to the fourth generation of Infineon's IGBT product line. It replaces previous generations such as the IRGPH30MD2. The device integrates an IGBT chip with a HEXFRED diode in a single module to optimize performance density.