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Product Detailed Parameters
- Description：IGBT 600V 85A SUPER-247
- Series：-
- Mfr：Infineon Technologies
- Package：Bag
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：85 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.3V @ 15V, 60A
- Power - Max：350 W
- Switching Energy：790µJ (on), 1.98mJ (off)
- Input Type：Standard
- Gate Charge：340 nC
- Td (on/off) @ 25°C：34ns/54ns
- Test Condition：480V, 60A, 5Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-274AA
- Supplier Device Package：SUPER-247™ (TO-274AA)
- Grade：-
- Qualification：-
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Overview
The IRG4PSC71K is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes silicon technology and is housed in a TO-274AA-3 through-hole package. The device features a maximum collector-emitter voltage of 600 V and a continuous collector current of 85 A at 25°C. Key electrical parameters include a collector-emitter saturation voltage of 2.3 V, a power dissipation rating of 350 W, and gate-emitter voltage limits of -20 V to +20 V. It operates within a temperature range of -55°C to +150°C.
Feature Summary
- Designed for high-speed switching applications with UltraFast characteristics optimized for frequencies between 8 kHz and 25 kHz.
- Provides robust performance in single-configuration modules suitable for demanding power conversion environments.
Applications
- High-frequency inverters
- Switch-mode power supplies
- Motor drive systems
Procurement Notes
Verify the specific suffix K against official datasheets to confirm exact binning or variant specifications. Confirm end-of-life status as distribution channels may list this component as discontinued. Ensure thermal management designs account for the specified 350 W power dissipation limit under actual operating conditions rather than idealized ratings.
Selection Notes
Select this component when a 600 V IGBT with 85 A continuous current capability is required for through-hole mounting. The TO-274AA-3 package offers a balance of current handling and thermal performance. Consider the 2.3 V saturation voltage for conduction loss calculations in efficiency-critical designs operating within the 8-25 kHz frequency range.
Part Context
This part belongs to the Infineon IGBT transistor category, specifically within the sub-category of general-purpose or fast-switching devices. It represents a discrete power semiconductor solution designed for medium-power industrial applications requiring reliable switching and high voltage tolerance.
Replacement Considerations
Public confirmed substitute part numbers are not available in the provided documentation. Cross-reference tools should be used cautiously to verify pinout compatibility and absolute maximum ratings before considering alternatives.
