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Product Detailed Parameters
- Description：IGBT 600V 9A TO-252AA
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：9:00 AM
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：2.62V @ 15V, 5A
- Power - Max：38 W
- Switching Energy：250µJ (on), 140µJ (off)
- Input Type：Standard
- Gate Charge：19 nC
- Td (on/off) @ 25°C：49ns/97ns
- Test Condition：480V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：28 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA (DPAK)
- Grade：-
- Qualification：-
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Overview
The IRG4RC10KDPBF is a Generation 4 Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft-recovery diode. It features a 600V collector-to-emitter voltage rating and operates in the TO-252AA package. The device supports a continuous collector current of 9.0A at 25°C case temperature, reducing to 5.0A at 100°C. It includes short-circuit withstand capability for 10µs at 125°C with VGE=15V. The typical saturation voltage is 2.39V at 5.0A.
Feature Summary
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency compared to previous generations.
- Co-packaged HEXFRED ultrafast, ultra-soft-recovery anti-parallel diodes optimized for bridge configurations.
- Short circuit rated to 10µs at 125°C junction temperature, suitable for high-frequency operation above 5.0 kHz.
Applications
- High power density motor controls
- Bridge configurations utilizing co-packaged diodes
- Switching applications requiring high operating frequencies
Procurement Notes
Verify component authenticity through authorized Infineon channels or certified distributors. Confirm the specific datasheet revision matches your design requirements. Ensure thermal management solutions align with the specified junction-to-case thermal resistance values. Check for lead-free compliance status if required by environmental regulations.
Selection Notes
Select this component for designs requiring robust short-circuit protection and high switching speeds. Evaluate thermal performance based on the specified junction-to-case resistance values under expected load conditions. Consider the integrated diode characteristics when designing bridge circuits to minimize switching losses and EMI.
Part Context
This part belongs to the Infineon Generation 4 IGBT family, designed for improved efficiency and parameter consistency. It integrates HEXFRED technology for superior reverse recovery performance. The TO-252AA package provides a standard footprint for surface-mount applications in power electronics.
Replacement Considerations
Consult official replacement lists for end-of-life transitions. Verify electrical compatibility and pinout alignment before substituting with alternative models from the same manufacturer.
FAQ
What is the maximum short-circuit withstand time?
The device is rated for a short-circuit withstand time of 10µs at a junction temperature of 125°C with VGE set to 15V.
How does the integrated diode improve performance?
The co-packaged HEXFRED diode offers ultrafast soft-recovery characteristics, which minimize reverse recovery charge and reduce switching losses and electromagnetic interference.
What is the typical saturation voltage?
The typical collector-to-emitter saturation voltage is 2.39V when measured at a gate-emitter voltage of 15V and a collector current of 5.0A.
