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Product Detailed Parameters
- Description：IGBT 600V 14A TO-252AA
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：14 A
- Current - Collector Pulsed (Icm)：18 A
- Vce(on) (Max) @ Vge, Ic：1.8V @ 15V, 8A
- Power - Max：38 W
- Switching Energy：310µJ (on), 3.28mJ (off)
- Input Type：Standard
- Gate Charge：15 nC
- Td (on/off) @ 25°C：76ns/815ns
- Test Condition：480V, 8A, 100Ohm, 15V
- Reverse Recovery Time (trr)：28 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-252-3, DPAK (2 Leads + Tab), SC-63
- Supplier Device Package：TO-252AA (DPAK)
- Grade：-
- Qualification：-
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Overview
The IRG4RC10SDTRPBFBTMA1 is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a field-stop technology design optimized for high efficiency and low switching losses. The component is rated for a collector-emitter voltage of 600V and a continuous collector current of 10A at 25°C. It utilizes a surface-mount TO-263 package to facilitate automated assembly and robust thermal performance in power conversion applications.
Feature Summary
- Field-stop technology for reduced switching energy
- Soft recovery fast ultrafast FRD integrated
- Surface-mount TO-263 package for thermal efficiency
Applications
- Motor control drives
- Switched-mode power supplies
- High-frequency inverters
Procurement Notes
Verify the specific suffix BTMA1 against official Infineon documentation to confirm tape-and-reel packaging and exact binning. Confirm RoHS compliance status through the latest material declaration. Check for obsolescence notices as this part number may be subject to lifecycle changes. Ensure the ordering code matches the required lead time and availability from authorized distributors.
Selection Notes
Select this IGBT for applications requiring a balance between conduction loss and switching speed at 600V ratings. The integrated fast recovery diode simplifies half-bridge configurations. Consider the thermal resistance of the TO-263 package when designing heatsinking solutions. Verify gate drive requirements align with the specified threshold voltages for reliable turn-on and turn-off characteristics.
Part Context
This component belongs to Infineon's IRG4RC series, which focuses on high-efficiency power switching. The RC series typically combines field-stop IGBTs with ultrafast diodes. This specific model targets industrial and consumer power electronics where space constraints and thermal management are critical design factors.
Replacement Considerations
Consult Infineon's official replacement guide for direct equivalents. Cross-reference electrical parameters such as Vcesat, t_off, and Eoss before substituting. Ensure pinout compatibility and thermal interface specifications match the existing PCB layout.
