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The IRG4RC10SDTRRP is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-emitter breakdown voltage of 600 V and a continuous collector current rating of 14 A at 25 °C. The device is housed in a surface-mount TO-252AA (DPAK) package with a thermal resistance supporting a power dissipation of 38 W. It utilizes silicon technology and operates within a temperature range from -55 °C to +150 °C.
This component is listed as obsolete or end-of-life by the manufacturer. Availability is restricted to third-party distributors holding existing stock. Verify authenticity and lot dates carefully when sourcing from secondary markets, as original manufacturing support has ceased.
Select this part for low-power applications requiring 600 V blocking capability and moderate current handling up to 14 A. The TO-252AA package suits space-constrained designs needing through-hole compatible surface mounting. Ensure thermal management aligns with the 38 W dissipation limit under expected operating conditions.
The IRG4RC10SDTRRP belongs to Infineon's UltraFast series of IGBTs, targeting efficiency in medium-power conversion circuits. It complements other single-channel devices in the portfolio, offering a balance between switching speed and conduction losses suitable for consumer electronics and industrial control modules.
No direct public substitute part numbers are confirmed in the provided documentation. Engineers should evaluate equivalent 600 V, 14 A IGBTs in TO-252 packages from available active product lines, verifying pinout compatibility and thermal characteristics.