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Product Detailed Parameters
- Description：IGBT TRENCH 600V 25A TO220AB FP
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：25 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.88V @ 15V, 120A
- Power - Max：37 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：79 nC
- Td (on/off) @ 25°C：20ns/160ns
- Test Condition：400V, 25A, 10Ohm
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3 Full Pack
- Supplier Device Package：TO-220AB Full-Pak
- Grade：-
- Qualification：-
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Overview
The IRG6IC30UPBF is a single IGBT from Infineon Technologies, packaged in a TO-220AB Full-Pak. It features a maximum collector-emitter breakdown voltage of 600V and a continuous collector current of 25A. The device has a power dissipation rating of 37W. Key electrical parameters include a gate charge of 79nC, with turn-on and turn-off delay times of 20ns and 160ns respectively, tested at 400V, 25A, and 10 Ohm gate resistance.
Feature Summary
- Trench field-stop technology for optimized switching performance
- Designed for high-voltage applications up to 600V
- Robust packaging suitable for through-hole mounting
Applications
- Plasma Display Panel (PDP) drivers
- High-frequency power conversion circuits
- Inductive load switching applications
Procurement Notes
Verify the specific ordering suffix and package variant against the official datasheet to ensure compatibility with your PCB footprint and thermal requirements. Confirm RoHS compliance status if required by your manufacturing standards. Check for any recent lifecycle notices or obsolescence warnings directly from Infineon before finalizing procurement plans.
Selection Notes
Select this component when a 600V IGBT with 25A current capacity is required for through-hole assembly. Consider the 37W power dissipation limit and thermal management needs for your specific application environment. Ensure the switching speeds align with your circuit's frequency requirements and that the gate drive characteristics match your controller outputs.
Part Context
This IGBT belongs to Infineon's single transistor lineup, utilizing trench technology for improved efficiency. It is distinct from MOSFETs and other discrete semiconductors due to its hybrid structure combining the ease of gate drive with the low conduction losses of bipolar devices, making it suitable for medium-power switching tasks.
Replacement Considerations
Consult Infineon's official replacement guide for direct substitutes. Verify pinout compatibility and electrical parameter equivalence, particularly Vces, Ic, and package dimensions, before integrating alternative components into existing designs.
