IRG7PH30K10DPBF

IRG7PH30K10DPBF

  • Description:IGBT TRENCH 1200V 30A TO-247AC
  • Series:-

SKU:51f5e48139d4 Category: Brand:

ChipApex WhatsApp

Consult the customer manager about the wholesale price.

consultation hotline:86-132-6715-2157

email:[email protected]
Contact the product manager for consultation. One-stop consultation is available.


Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.

Submitting!
Submission successful!
Submission failed!
Email error!
Phone number error!

Product Detailed Parameters

  • Description:IGBT TRENCH 1200V 30A TO-247AC
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:Trench
  • Voltage - Collector Emitter Breakdown (Max):1200 V
  • Current - Collector (Ic) (Max):30 A
  • Current - Collector Pulsed (Icm):27 A
  • Vce(on) (Max) @ Vge, Ic:2.35V @ 15V, 9A
  • Power - Max:180 W
  • Switching Energy:530µJ (on), 380µJ (off)
  • Input Type:Standard
  • Gate Charge:45 nC
  • Td (on/off) @ 25°C:14ns/110ns
  • Test Condition:600V, 9A, 22Ohm, 15V
  • Reverse Recovery Time (trr):140 ns
  • Operating Temperature:-55°C ~ 150°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-247-3
  • Supplier Device Package:TO-247AC
  • Grade:-
  • Qualification:-

Download product information

IRG7PH30K10DPBF

Overview

The IRG7PH30K10DPbF is an n-channel Insulated Gate Bipolar Transistor (IGBT) featuring Ultrafast Soft Recovery Diode technology. It utilizes Low VCE(on) Trench IGBT Technology to achieve low switching losses and a positive VCE(on) temperature coefficient. The device supports a collector-to-emitter voltage of 1200V, with continuous collector currents of 30A at 25°C and 16A at 100°C case temperature. It includes a short circuit safe operating area (SCSOA) of 10µs and a square Reverse Bias Safe Operating Area (RBSOA). The component is housed in a TO-247AC package.

Feature Summary

  • Low VCE(on) Trench IGBT Technology for high efficiency
  • Ultrafast soft recovery Co-Pak diode
  • Positive VCE(on) temperature coefficient
  • Square RBSOA and rugged transient performance

Applications

  • Industrial motor drives
  • Switched-mode power supplies
  • High-frequency inverters
  • Welding equipment

Procurement Notes

Verify the specific ordering suffix DPBF against official manufacturer documentation to confirm lead-free status and RoHS compliance. Ensure the procurement channel provides valid traceability for industrial-grade components. Cross-reference the datasheet revision date to confirm electrical characteristics match current production standards before finalizing orders.

Selection Notes

Select this component for applications requiring high blocking voltage and fast switching speeds. The integrated ultrafast diode reduces external component count. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Confirm that the gate drive voltage aligns with the typical threshold and saturation characteristics for optimal conduction loss performance.

Part Context

This part belongs to the IRG7PH series of high-voltage IGBTs designed for industrial markets. It combines the advantages of MOSFET input impedance with the low conduction losses of bipolar transistors. The series is characterized by tight parameter distribution and robust packaging suitable for demanding power conversion environments.

Replacement Considerations

Consult official cross-reference tools or manufacturer databases for verified substitutes. Ensure any replacement matches the 1200V rating, TO-247AC package, and equivalent switching characteristics.

IRG7PH30K10DPBFIRG7PH30K10DPBF

Click on the inquiry