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The IRG7PH30K10DPbF is an n-channel Insulated Gate Bipolar Transistor (IGBT) featuring Ultrafast Soft Recovery Diode technology. It utilizes Low VCE(on) Trench IGBT Technology to achieve low switching losses and a positive VCE(on) temperature coefficient. The device supports a collector-to-emitter voltage of 1200V, with continuous collector currents of 30A at 25°C and 16A at 100°C case temperature. It includes a short circuit safe operating area (SCSOA) of 10µs and a square Reverse Bias Safe Operating Area (RBSOA). The component is housed in a TO-247AC package.
Verify the specific ordering suffix DPBF against official manufacturer documentation to confirm lead-free status and RoHS compliance. Ensure the procurement channel provides valid traceability for industrial-grade components. Cross-reference the datasheet revision date to confirm electrical characteristics match current production standards before finalizing orders.
Select this component for applications requiring high blocking voltage and fast switching speeds. The integrated ultrafast diode reduces external component count. Evaluate thermal management requirements based on the specified junction-to-case thermal resistance. Confirm that the gate drive voltage aligns with the typical threshold and saturation characteristics for optimal conduction loss performance.
This part belongs to the IRG7PH series of high-voltage IGBTs designed for industrial markets. It combines the advantages of MOSFET input impedance with the low conduction losses of bipolar transistors. The series is characterized by tight parameter distribution and robust packaging suitable for demanding power conversion environments.
Consult official cross-reference tools or manufacturer databases for verified substitutes. Ensure any replacement matches the 1200V rating, TO-247AC package, and equivalent switching characteristics.