IRG7PH35UDPBF

Description：IGBT TRENCH 1200V 50A TO-247AC
Series：-

SKU:22960497068b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 1200V 50A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：50 A
Current - Collector Pulsed (Icm)：60 A
Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 20A
Power - Max：180 W
Switching Energy：1.06mJ (on), 620µJ (off)
Input Type：Standard
Gate Charge：85 nC
Td (on/off) @ 25°C：30ns/160ns
Test Condition：600V, 20A, 10Ohm, 15V
Reverse Recovery Time (trr)：105 ns
Operating Temperature：-55°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG7PH35UDPBF

Overview

The IRG7PH35UDPbF is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) trench IGBT technology to achieve low switching losses and a positive temperature coefficient for VCE(on). The device features a square Reverse Bias Safe Operating Area (RBSOA), ensuring rugged transient performance. Key electrical parameters include a collector-to-emitter voltage of 1200V, a continuous collector current of 50A at 25°C case temperature, and a maximum power dissipation of 180W. The typical saturation voltage is 1.9V at 20A.

Feature Summary

Low VCE(on) trench IGBT technology combined with low switching losses for high efficiency across wide application ranges.
Ultrafast soft recovery co-pack diode with tight parameter distribution for excellent current sharing in parallel operation.
Square RBSOA providing rugged transient performance and increased reliability under harsh operating conditions.

Applications

Uninterruptible Power Supplies (U.P.S.)
Welding equipment
Solar Inverters
Induction Heating systems

Procurement Notes

Verify the specific package variant upon ordering; the 'PbF' suffix indicates the TO-247AC package, while the 'EP' suffix corresponds to the TO-247AD package. Confirm that the procurement channel provides official datasheets matching the exact part number to ensure correct pinout and thermal characteristics. Check for RoHS compliance documentation as required by your manufacturing standards.

Selection Notes

Select this component for applications requiring high voltage blocking capability and robust switching performance. The positive temperature coefficient of VCE(on) facilitates reliable parallel operation without active current balancing. Ensure the gate drive circuitry supports the specified VGE range and consider the thermal resistance values when designing the heatsink interface for the chosen package type.

Part Context

This device belongs to the IRG7PH series of field-stop trench IGBTs from Infineon. It is designed for industrial market applications where high reliability and efficiency are critical. The product line emphasizes low conduction and switching losses to support compact power supply designs.

Replacement Considerations

The IRG7PH35UD-EP is a verified equivalent part within the same family, differing primarily in the TO-247AD package instead of the TO-247AC package. Verify mechanical dimensions and mounting torque specifications before substituting packages.

FAQ

What is the difference between the IRG7PH35UDPbF and IRG7PH35UD-EP?

The primary difference is the package style. The IRG7PH35UDPbF uses the TO-247AC package, whereas the IRG7PH35UD-EP uses the TO-247AD package. Both share identical electrical characteristics and functionality.