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Product Detailed Parameters
- Description：IGBT 1200V 45A TO-247AC
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：45 A
- Current - Collector Pulsed (Icm)：60 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 15A
- Power - Max：216 W
- Switching Energy：1mJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：135 nC
- Td (on/off) @ 25°C：50ns/240ns
- Test Condition：600V, 15A, 10Ohm, 15V
- Reverse Recovery Time (trr)：120 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG7PH37K10DPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. This component utilizes low VCE(sat) trench IGBT technology to achieve high efficiency and reduced switching losses. It features a maximum junction temperature rating of 175 °C and exhibits a positive VCE(sat) temperature coefficient, which facilitates excellent current sharing in parallel configurations. The device is designed for rugged transient performance and includes tight parameter distribution for consistent operation.
Feature Summary
- Low saturation voltage and switching losses due to trench IGBT technology
- Positive temperature coefficient for safe parallel operation
- High thermal stability with a 175 °C maximum junction temperature
Applications
- Uninterruptible Power Supplies (UPS)
- Solar inverters
- Induction heating systems
- Welding equipment
Procurement Notes
Verify the manufacturer designation carefully, as International Rectifier was acquired by Infineon Technologies. Ensure the ordering suffix matches the specific package and lead-free requirements. Confirm that the component meets the necessary automotive or industrial qualification standards required for your specific application environment before finalizing procurement.
Selection Notes
Select this component based on its low conduction and switching loss characteristics suitable for high-frequency applications. Consider the positive temperature coefficient for designs requiring parallel IGBTs to ensure balanced current distribution. Verify that the thermal management system can handle the power dissipation at the intended operating frequency and load conditions.
Part Context
This IGBT belongs to the High Performance series from International Rectifier, characterized by advanced trench gate technology. It is engineered to replace older planar IGBTs in applications demanding higher efficiency and better thermal performance. The device is widely used in power conversion systems where minimizing energy loss and maximizing reliability are critical design parameters.
Replacement Considerations
Direct replacements may include other IGBTs from the same family with similar voltage and current ratings, such as the IRG7PH37K10D. When substituting, verify pin compatibility and thermal resistance values. Cross-referencing with Infineon's current portfolio is recommended to identify updated equivalents with improved specifications if available.
