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Product Detailed Parameters
- Description：IGBT TRENCH 1200V 85A TO-247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：85 A
- Current - Collector Pulsed (Icm)：90 A
- Vce(on) (Max) @ Vge, Ic：2V @ 15V, 30A
- Power - Max：320 W
- Switching Energy：2.11mJ (on), 1.18mJ (off)
- Input Type：Standard
- Gate Charge：157 nC
- Td (on/off) @ 25°C：25ns/229ns
- Test Condition：600V, 30A, 10Ohm, 15V
- Reverse Recovery Time (trr)：153 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IRG7PH42UD-EP is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a maximum continuous collector current of 85 A and a maximum collector-emitter voltage of 1200 V. The device is housed in a TO-247AC package with three pins for through-hole mounting. Key electrical specifications include a maximum gate-emitter voltage of ±30 V and a maximum power dissipation of 320 W. The component operates within a temperature range of -55 °C to +150 °C and supports switching frequencies between 8 kHz and 30 kHz.
Feature Summary
- High-voltage capability with 1200 V collector-emitter breakdown voltage
- Robust thermal performance supporting up to 320 W power dissipation
- Designed for high-current applications with 85 A continuous collector current rating
Applications
- Industrial motor drives
- Switched-mode power supplies
- Welding equipment
Procurement Notes
Verify the specific suffix 'UD' against official Infineon documentation to confirm the exact pin configuration and mechanical dimensions, as variations exist within the TO-247 family. Ensure the procurement source provides valid RoHS compliance certificates and original manufacturer traceability. Cross-reference the part number with the latest datasheet revision to confirm operational parameters match design requirements before integration.
Selection Notes
Select this component for designs requiring high voltage isolation and moderate switching speeds up to 30 kHz. The TO-247AC package facilitates efficient heat sinking for high-power density applications. Consider the 85 A current rating relative to peak load demands and derating curves at elevated junction temperatures. Verify gate drive compatibility with the ±30 V limit and ensure thermal management solutions support the 320 W dissipation capability.
Part Context
This IGBT belongs to Infineon's High Performance Fast (HPF) series, optimized for industrial applications. The EP suffix typically denotes enhanced product or specific qualification standards. It serves as a discrete power switch alternative to modules in medium-power systems. The technology balances conduction losses and switching speed for cost-effective system designs.
Replacement Considerations
The IRG7PH42UDPBF is a comparable variant within the same series but utilizes a TO-247AD package. Verify mechanical footprint compatibility when substituting, as pin spacing and hole configurations may differ between TO-247AC and TO-247AD packages. Electrical characteristics are similar, but thermal resistance values may vary due to package differences.
