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Product Detailed Parameters
- Description：IGBT 1200V 90A TO-247AD
- Series：-
- Mfr：International Rectifier
- Package：Bulk
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1200 V
- Current - Collector (Ic) (Max)：90 A
- Current - Collector Pulsed (Icm)：160 A
- Vce(on) (Max) @ Vge, Ic：2.4V @ 15V, 35A
- Power - Max：400 W
- Switching Energy：2.3mJ (on), 1.6mJ (off)
- Input Type：Standard
- Gate Charge：300 nC
- Td (on/off) @ 25°C：90ns/340ns
- Test Condition：600V, 35A, 5Ohm, 15V
- Reverse Recovery Time (trr)：130 ns
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
- Grade：-
- Qualification：-
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Overview
The IRG7PH50K10D-EPBF is an Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. This component features a 1200V collector-emitter breakdown voltage and a continuous collector current rating of 50A at 25°C. It utilizes the IGBT4 technology platform to deliver optimized switching performance for medium-frequency applications ranging from 1 to 10kHz. The device is housed in a TO-247AD surface-mount package with three terminals. Key electrical characteristics include a maximum gate-emitter voltage of ±20V and a typical saturation voltage of approximately 2.3V at rated conditions.
Feature Summary
- Integrated ultrafast soft recovery anti-parallel diode for efficient commutation
- Optimized for medium frequency operation between 1kHz and 10kHz
- Low switching losses including tail current reduction
- High short-circuit withstand capability
Applications
- Industrial motor drives and inverters
- Uninterruptible power supplies (UPS)
- Switched-mode power supplies (SMPS)
- Induction heating systems
Procurement Notes
Verify the presence of the -EP suffix, which indicates automotive-grade qualification standards. Confirm RoHS compliance through the specific NPBF or PBF designation on the ordering code. Ensure the TO-247AD surface-mount footprint matches the target PCB layout dimensions before procurement.
Selection Notes
Select this component when a 1200V blocking voltage and 50A continuous current are required in a compact SMT form factor. Consider the integrated diode's reverse recovery characteristics if used in hard-switching topologies. Evaluate thermal management requirements based on the 180W dissipation rating and junction temperature limits up to 150°C.
Part Context
This part belongs to the IRG7PH series of high-voltage IGBTs designed for robust industrial applications. It represents a transition point where International Rectifier products were integrated into Infineon's broader portfolio, maintaining specific pinouts and electrical profiles familiar to existing designs.
Replacement Considerations
Direct replacements include the IRG7PH50UD-EP and IRG7PH50KD2 variants within the same family. Cross-compatibility should be verified against datasheet parameters such as Vce(sat), switching times, and thermal resistance. Ensure any substitute maintains the TO-247AD SMT package outline.
