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Product Detailed Parameters
- Description：IGBT 1400V 40A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：1400 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：200 A
- Vce(on) (Max) @ Vge, Ic：2.35V @ 15V, 20A
- Power - Max：167 W
- Switching Energy：650µJ (off)
- Input Type：Standard
- Gate Charge：98 nC
- Td (on/off) @ 25°C：-/150ns
- Test Condition：600V, 20A, 10Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-40°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRG7PK35UD1PBF is a single N-channel Insulated Gate Bipolar Transistor manufactured by Infineon Technologies. It features a collector-emitter voltage rating of 1400 V and a maximum DC collector current of 40 A. The device has a power dissipation capacity of 167 W and utilizes the TO-247AC-3 through-hole package. It operates with a maximum gate-to-emitter voltage of ±30 V.
Feature Summary
- Single IGBT configuration for high-voltage switching applications
- Robust thermal performance within the TO-247AC-3 package
- High breakdown voltage capability for industrial power systems
Applications
- Industrial motor drives
- Switched-mode power supplies
- Inverter circuits
Procurement Notes
Verify component authenticity through authorized channels, as this part is marked obsolete. Confirm datasheet revisions to ensure compatibility with existing designs. Check for RoHS compliance status and lead times from remaining stock suppliers. Validate pinout alignment before integration into new PCB layouts.
Selection Notes
Select this component for applications requiring 1400 V blocking capability and moderate current handling up to 40 A. Consider the TO-247AC-3 package for through-hole mounting requirements. Evaluate thermal management needs based on the 167 W power dissipation rating under specific operating conditions.
Part Context
This IGBT belongs to Infineon's discrete power transistor portfolio designed for medium to high-power conversion tasks. It serves as a fundamental switching element in power electronics, offering reliable performance in demanding electrical environments typical of industrial and automotive sectors.
Replacement Considerations
As the IRG7PK35UD1PBF is obsolete, verify equivalent parts with matching 1400 V ratings and similar current capabilities. Ensure replacement components fit the TO-247AC-3 footprint or adapt layout accordingly.
