IRG8P08N120KDPBF

Description：IGBT 1200V 15A TO-247AC
Series：-

SKU:571ceceea0da Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT 1200V 15A TO-247AC
Series：-
Mfr：Infineon Technologies
Package：Tube
IGBT Type：-
Voltage - Collector Emitter Breakdown (Max)：1200 V
Current - Collector (Ic) (Max)：15 A
Current - Collector Pulsed (Icm)：15 A
Vce(on) (Max) @ Vge, Ic：2V @ 15V, 5A
Power - Max：89 W
Switching Energy：300µJ (on), 300µJ (off)
Input Type：Standard
Gate Charge：45 nC
Td (on/off) @ 25°C：20ns/160ns
Test Condition：600V, 5A, 47Ohm, 15V
Reverse Recovery Time (trr)：50 ns
Operating Temperature：-40°C ~ 150°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-247-3
Supplier Device Package：TO-247AC
Grade：-
Qualification：-

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IRG8P08N120KDPBF

Overview

The IRG8P08N120KDPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It features a collector-to-emitter voltage rating of 1200 V and a continuous collector current of 15 A at 25°C case temperature. The device operates within a junction temperature range of -40°C to +150°C and utilizes a TO-247AC package for through-hole mounting.

Feature Summary

Features a benchmark low saturation voltage for high efficiency in motor drive applications
Includes a 10µs short circuit safe operating area to increase protection scheme margins
Exhibits a positive saturation voltage temperature coefficient for excellent current sharing in parallel operation
Provides rugged transient performance supported by a square reverse bias safe operating area

Applications

Industrial Motor Drive
Uninterruptible Power Supply (UPS)
Solar Inverters
Welding Equipment

Procurement Notes

Verify the specific ordering suffix against official documentation to confirm the exact package type, as variants exist with different thermal and mechanical characteristics. Ensure compliance with environmental standards such as RoHS requirements before finalizing procurement specifications for production integration.

Selection Notes

Evaluate the component based on its 1200V blocking capability and 15A continuous current rating relative to the system's peak load requirements. Consider the thermal resistance parameters and the necessity for adequate heat sinking to maintain junction temperatures within the specified operational limits during high-frequency switching cycles.

Part Context

This component belongs to the IGBT family from Infineon Technologies, designed for power conversion and control. It integrates a fast-recovery diode to facilitate efficient commutation in half-bridge or full-bridge topologies commonly found in industrial power electronics systems requiring robust switching performance.