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— IC芯片 | 连接器 | 传感器 | 被动器件 —
The IRG8P15N120KD-EPBF is a single N-channel IGBT in a TO-247AD package. It features a maximum collector-emitter voltage of 1200 V and a continuous collector current of 60 A at 25 °C. The device has a maximum power dissipation of 390 W and operates up to +175 °C junction temperature. Key electrical parameters include an on-state voltage of 2.6 V at 60 A, turn-on energy of 1.8 mJ, and turn-off energy of 2.5 mJ at 1200 V/60 A.
Verify the manufacturer marking against Infineon or International Rectifier branding, as IR was acquired by Infineon. Confirm the suffix 'KD' indicates the specific diode variant and 'EPBF' denotes lead-free compliance. Request the official datasheet to validate the exact thermal resistance values and switching energy curves for your operating conditions.
Select this component when a 1200 V rating is required with moderate current handling around 60 A. The TO-247AD package facilitates through-hole mounting and heatsink attachment. Consider the 1.8 mJ turn-on energy for applications requiring lower switching losses compared to standard trench IGBTs.
This part belongs to the KD series of IGBTs from International Rectifier (now Infineon). The series is characterized by Field-Stop Trench technology, designed to balance low conduction losses with fast switching capabilities. It is commonly used in industrial power conversion systems.
Check for IRG8P15N120KDPBF or IRG8P15N120KD as potential equivalents. Verify pinout compatibility and ensure the replacement maintains the same voltage and current ratings.