IRGB30B60KPBF

IRGB30B60KPBF

  • Description:IGBT NPT 600V 78A TO-220AB
  • Series:-

SKU:f974fed3da1c Category: Brand:

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Product Detailed Parameters

  • Description:IGBT NPT 600V 78A TO-220AB
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):78 A
  • Current - Collector Pulsed (Icm):120 A
  • Vce(on) (Max) @ Vge, Ic:2.35V @ 15V, 30A
  • Power - Max:370 W
  • Switching Energy:350µJ (on), 825µJ (off)
  • Input Type:Standard
  • Gate Charge:102 nC
  • Td (on/off) @ 25°C:46ns/185ns
  • Test Condition:400V, 30A, 10Ohm, 15V
  • Reverse Recovery Time (trr):-
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3
  • Supplier Device Package:TO-220AB
  • Grade:-
  • Qualification:-

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IRGB30B60KPBF

Overview

The IRGB30B60KPbF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes Non Punch Through IGBT technology and features a TO-220AB package for through-hole mounting. The device supports a maximum collector-to-emitter voltage of 600 V and a continuous collector current of 78 A at a case temperature of 25°C. It offers a typical on-state voltage of 1.95 V at 25°C and 2.40 V at 150°C, with a maximum junction temperature rating of 175°C.

Feature Summary

  • Incorporates Non Punch Through IGBT technology to achieve low on-state voltage characteristics.
  • Provides 10 µs short circuit capability for rugged transient performance in demanding applications.
  • Features a square Reverse Bias Safe Operating Area (RBSOA) across the full operating range.
  • Exhibits a positive on-state voltage temperature coefficient to facilitate excellent current sharing during parallel operation.

Applications

  • Motor control systems requiring benchmark efficiency
  • High-frequency switching power supplies
  • Induction heating equipment

Procurement Notes

Verify the component authenticity against official Infineon documentation before integration. Confirm that the specific ordering suffix matches the required lead-free status and package variant. Ensure thermal management designs account for the specified junction-to-case thermal resistance values under actual operating conditions.

Selection Notes

Select this component when high voltage blocking capability and robust short-circuit tolerance are required. The positive temperature coefficient aids in paralleling multiple units without complex current balancing circuits. Consider the 175°C maximum junction temperature for high-temperature environments where standard silicon limits would be exceeded.

Part Context

This part belongs to the IRGS/IRGB/IRGSL30B60K series from Infineon. It shares core electrical specifications with the surface-mount D2Pak (IRGS30B60KPbF) and TO-262 (IRGSL30B60KPbF) variants. The primary distinction lies in the mechanical package form factor, with the IRGB30B60KPbF specifically designed for through-hole PCB mounting.

Replacement Considerations

Direct pin-compatible replacements within the same family include IRGS30B60KPbF and IRGSL30B60KPbF. Verify that any substitute maintains the 600V rating and 78A current capacity while matching the TO-220AB footprint constraints.

FAQ

What is the maximum short circuit duration for this IGBT?

The device is rated for a short circuit duration of 10 microseconds at a junction temperature of 150°C.

Does this component support parallel operation?

Yes, it features a positive VCE(on) temperature coefficient, which ensures stable current sharing when multiple devices are operated in parallel.

What is the maximum operating junction temperature?

The maximum rated operating junction temperature is 175°C.

IRGB30B60KPBFIRGB30B60KPBF

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