IRGB4056DPBF

$1.50

Description：IGBT TRENCH 600V 24A TO-220AB
Series：-

SKU:9a6e3288800b Category: Single IGBTs Brand: Infineon Technologies

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Product introduction

Product Detailed Parameters

Description：IGBT TRENCH 600V 24A TO-220AB
Series：-
Mfr：Infineon Technologies
Package：Bulk,Tube
IGBT Type：Trench
Voltage - Collector Emitter Breakdown (Max)：600 V
Current - Collector (Ic) (Max)：24 A
Current - Collector Pulsed (Icm)：48 A
Vce(on) (Max) @ Vge, Ic：1.85V @ 15V, 12A
Power - Max：140 W
Switching Energy：75µJ (on), 225µJ (off)
Input Type：Standard
Gate Charge：25 nC
Td (on/off) @ 25°C：31ns/83ns
Test Condition：400V, 12A, 22Ohm, 15V
Reverse Recovery Time (trr)：68 ns
Operating Temperature：-55°C ~ 175°C (TJ)
Mounting Type：Through Hole
Package / Case：TO-220-3
Supplier Device Package：TO-220AB
Grade：-
Qualification：-

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IRGB4056DPBF

Overview

The IRGB4056DPbF is an Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) Trench IGBT technology and features a TO-220AB package. Key electrical parameters include a collector-to-emitter voltage (VCES) of 600V, a continuous collector current (IC) of 12A at TC=100°C, and a maximum junction temperature of 175°C. The device exhibits a typical saturation voltage of 1.55V at 25°C and supports a short circuit safe operating area of 5µs.

Feature Summary

Low switching losses combined with low on-state voltage for high efficiency
Ultrafast soft recovery co-packaged diode to minimize electromagnetic interference
Positive temperature coefficient for VCE(on) ensuring excellent current sharing in parallel operation
Robust transient performance with a square reverse bias safe operating area

Applications

Industrial motor drives
High-frequency power supplies
Uninterruptible power systems (UPS)
Welding equipment

Procurement Notes

Verify the component authenticity through official Infineon channels or authorized distributors. Confirm that the specific ordering suffix matches the required lead-free packaging specifications. Ensure the procurement source provides valid traceability documentation consistent with industrial market qualification standards before finalizing acquisition.

Selection Notes

Select this component for applications requiring rugged transient performance and high reliability. The positive temperature coefficient facilitates parallel operation without complex balancing circuits. Consider the thermal resistance characteristics when designing heat sinks, as the device operates up to 175°C junction temperature for enhanced durability under demanding conditions.

Part Context

This part belongs to the family of insulated gate bipolar transistors featuring trench technology. It integrates a fast recovery diode within a single TO-220AB package, designed specifically for industrial markets. The device combines high voltage blocking capabilities with efficient switching characteristics suitable for medium-power conversion tasks.