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Product Detailed Parameters
- Description：IGBT TRENCH 600V 20A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：20 A
- Current - Collector Pulsed (Icm)：40 A
- Vce(on) (Max) @ Vge, Ic：1.91V @ 15V, 10A
- Power - Max：101 W
- Switching Energy：29µJ (on), 200µJ (off)
- Input Type：Standard
- Gate Charge：21 nC
- Td (on/off) @ 25°C：27ns/79ns
- Test Condition：400V, 10A, 22Ohm, 15V
- Reverse Recovery Time (trr)：62 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGB4064DPbF is an insulated gate bipolar transistor featuring ultrafast soft recovery diode technology. It offers a collector-to-emitter breakdown voltage of 600 V and continuous collector current ratings of 20 A at 25°C case temperature and 10 A at 100°C. The device utilizes low VCE(on) Trench IGBT technology to minimize conduction losses. Key electrical parameters include a typical saturation voltage of 1.9 V at 25°C and 2.0 V at 175°C for a 10 A collector current. Switching characteristics show total switching loss up to 339 µJ at 25°C and 415 µJ at 175°C under specified test conditions.
Feature Summary
- Low VCE(on) Trench IGBT Technology
- Ultra Fast Soft Recovery Co-pak Diode
- Positive VCE(on) Temperature Coefficient
- Square RBSOA and 5µs SCSOA
Applications
- Switch-Mode Power Supplies
- Welding Applications
- Industrial Motor Control
- High Frequency Inverters
Procurement Notes
Verify the manufacturer designation, as Infineon Technologies acquired International Rectifier. Confirm the specific ordering suffix matches the lead-free requirement indicated by 'PbF'. Ensure the package type corresponds to TO-220AB as documented in the official datasheet. Cross-reference the date code and lot markings against current production standards to ensure component authenticity and traceability.
Selection Notes
Select this component for designs requiring rugged transient performance and excellent current sharing in parallel operation. The positive temperature coefficient aids in thermal stability. Consider the maximum junction temperature of 175°C for high-temperature environments. Evaluate the switching losses against the required operating frequency to ensure efficiency targets are met within the thermal constraints of the application.
Part Context
This part belongs to the IRG4PF/IRGB40 series of IGBTs with integrated anti-parallel diodes. It represents a generation of devices optimized for reduced switching losses compared to earlier models. The TO-220AB package provides a standard mounting solution for through-hole applications. The integration of the HEXFRED diode simplifies bridge configuration design.
Replacement Considerations
Check pinout compatibility with existing PCB layouts. Verify that the replacement device meets or exceeds the 600V breakdown voltage and 20A current requirements. Ensure the thermal resistance characteristics are suitable for the existing heatsinking arrangement.
FAQ
What is the maximum junction temperature for the IRGB4064DPbF?
The maximum operating junction temperature is 175 °C.
Does the IRGB4064DPbF have a square Reverse Bias Safe Operating Area?
Yes, the datasheet specifies a full square RBSOA.
What is the short circuit safe operating area duration?
The device supports a 5µs Short Circuit Safe Operating Area (SCSOA).
