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Product Detailed Parameters
- Description：IGBT NPT 600V 13A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：13 A
- Current - Collector Pulsed (Icm)：26 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 5A
- Power - Max：90 W
- Switching Energy：110µJ (on), 135µJ (off)
- Input Type：Standard
- Gate Charge：18.2 nC
- Td (on/off) @ 25°C：25ns/215ns
- Test Condition：400V, 5A, 100Ohm, 15V
- Reverse Recovery Time (trr)：70 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGB6B60KDPBF is a single n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes non-punch-through IGBT technology and features a TO-262 (D2Pak) surface-mount package. The device supports a collector-to-emitter voltage of 600 V and a continuous collector current of 18 A at 25°C case temperature. It offers a maximum power dissipation of 90 W at 25°C and operates within a junction temperature range of -55°C to +150°C.
Feature Summary
- Incorporates low VCE(on) non-punch-through IGBT technology for optimized conduction performance.
- Features ultrasoft diode reverse recovery characteristics to minimize switching losses and electromagnetic interference.
- Provides 10μs short circuit capability under specified conditions to enhance system ruggedness.
- Exhibits a positive VCE(on) temperature coefficient to facilitate excellent current sharing in parallel operation.
Applications
- Motor control systems requiring benchmark efficiency
- Industrial power supplies
- High-frequency switching applications
Procurement Notes
Verify the specific suffix 'KDPBF' against official Infineon documentation to confirm lead-free status and packaging type. Confirm that the component is sourced from authorized channels to ensure authenticity. Check for any recent product discontinuation notices or lifecycle changes directly from the manufacturer before finalizing procurement plans.
Selection Notes
Select this component for designs requiring a 600V rating with high surge current handling capabilities up to 26A. Ensure the thermal management solution can handle the specified junction-to-case thermal resistance. Verify that the gate drive circuitry aligns with the required threshold voltage and total gate charge specifications for optimal switching performance.
Part Context
This part belongs to the IRG/S/SL6B60KDPbF family, which includes variants in different packages such as TO-220AB and TO-262. The IRGB6B60KDPBF specifically denotes the D2Pak package version. It is designed for industrial market applications and shares core electrical characteristics with its siblings while differing in physical mounting and thermal properties.
Replacement Considerations
Consult official Infineon documentation for confirmed substitute part numbers. Cross-reference electrical parameters and package dimensions when evaluating alternatives.
FAQ
What is the short circuit withstand time for this IGBT?
The device provides a short circuit capability of 10 microseconds under specified test conditions.
Does this component include an integrated diode?
Yes, it integrates an ultrafast soft recovery diode alongside the IGBT.
What is the maximum pulsed collector current?
The maximum pulsed collector current (ICM) is rated at 26 A.
