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Product Detailed Parameters
- Description：IGBT 600V 40A TO-220AB
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：40 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：3V @ 15V, 20A
- Power - Max：160 W
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-220-3
- Supplier Device Package：TO-220AB
- Grade：-
- Qualification：-
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Overview
The IRGBC40U is a single n-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It features a collector-to-emitter voltage rating of 600 V and a continuous collector current capacity of 40 A at 25°C case temperature, reducing to 20 A at 100°C. The device utilizes a TO-220AB package with a maximum power dissipation of 160 W at 25°C. Key electrical parameters include a gate threshold voltage ranging from 3.0 V to 5.5 V, a typical saturation voltage of 2.2 V at 20 A, and total switching losses up to 1.6 mJ under specified conditions.
Feature Summary
- Optimized for high operating frequencies exceeding 5 kHz in hard switching applications
- Generation 4 IGBT design providing tighter parameter distribution and higher efficiency
- Switching-loss ratings encompass all tail losses for accurate thermal management
Applications
- High-frequency motor drives
- Power supplies
- Inverters
Procurement Notes
Verify the component origin carefully as this part was originally an International Rectifier product now managed by Infineon. Confirm that the datasheet specifications align with your specific thermal and electrical requirements. Check for RoHS compliance status if required by your manufacturing standards. Ensure the TO-220AB package dimensions match your PCB layout constraints before finalizing procurement.
Selection Notes
Select this component when designing circuits requiring high-voltage switching with moderate current capabilities. Consider the thermal resistance values for heatsink sizing, particularly noting the reduction in continuous current at elevated case temperatures. Evaluate the switching loss characteristics against your target operating frequency to ensure efficient performance within the safe operating area limits defined in the datasheet.
Part Context
This discrete IGBT belongs to the UltraFast series, designed for applications demanding fast switching speeds. It serves as a robust solution for medium-power electronics where efficiency and thermal stability are critical. The TO-220AB package facilitates through-hole mounting, making it suitable for prototyping and industrial equipment designs requiring reliable high-voltage control.
Replacement Considerations
Consult official replacement lists for equivalent or superior performance alternatives. Verify pinout compatibility and thermal characteristics when substituting with other 600V IGBTs in the TO-220AB package.
FAQ
What is the maximum pulsed collector current for the IRGBC40U?
The maximum pulsed collector current (ICM) and clamped inductive load current (ILM) are both rated at 160 A.
How does the continuous collector current change with temperature?
The continuous collector current decreases from 40 A at a case temperature of 25°C to 20 A at a case temperature of 100°C.
What is the internal emitter inductance value?
The internal emitter inductance is typically 7.5 nH, measured 5 mm from the package.
