ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 600V 75A DIE
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：-
- Vce(on) (Max) @ Vge, Ic：2.9V @ 15V, 75A
- Power - Max：-
- Switching Energy：-
- Input Type：Standard
- Gate Charge：-
- Td (on/off) @ 25°C：-
- Test Condition：-
- Reverse Recovery Time (trr)：-
- Operating Temperature：-
- Mounting Type：Surface Mount
- Package / Case：Die
- Supplier Device Package：Die
- Grade：-
- Qualification：-
Download product information
Overview
The IRGC75B60UB is a Gen 5 discrete IGBT with an anti-parallel diode, rated at 600 V and 75 A. It features a maximum collector-emitter saturation voltage of 3.5 V, a gate threshold voltage range of 4.5 V to 6.0 V, and turn-on/turn-off times of 100 ns and 120 ns respectively. The component operates within a temperature range of -55 °C to 150 °C.
Feature Summary
- Integrated anti-parallel diode for simplified circuit design
- Gen 5 TRENCHSTOP technology for optimized switching performance
- Industrial-grade reliability across wide operating temperatures
Applications
- Industrial motor drives
- Welding equipment
- Uninterruptible power supplies (UPS)
- High-efficiency power conversion systems
Procurement Notes
Verify the specific ordering suffix against official Infineon documentation to confirm exact package type and tape-and-reel specifications. Ensure the requested part matches the required industrial quality grade and RoHS compliance status before finalizing procurement.
Selection Notes
Select this component when a 600 V rating and 75 A continuous current capacity are required. Consider its 3.5 V saturation voltage and switching characteristics for applications prioritizing moderate switching speeds and high efficiency in industrial environments.
Part Context
This device belongs to Infineon's Gen 5 IGBT portfolio, utilizing TRENCHSTOP technology. It is designed as a robust solution for medium-power industrial applications, offering a balance between conduction losses and switching performance within the 600 V voltage class.
Replacement Considerations
Consult official replacement guides for direct equivalents such as other Gen 5 or Gen 6 IGBTs with matching 600 V and 75 A ratings. Verify pin compatibility and thermal characteristics before substitution.
FAQ
What is the maximum collector-emitter saturation voltage?
The maximum collector-emitter saturation voltage is 3.5 V.
Does this IGBT include an integrated freewheeling diode?
Yes, the IRGC75B60UB includes an integrated anti-parallel diode.
What is the specified operating temperature range?
The operating temperature range is from -55 °C to 150 °C.
