IRGIB10B60KD1P

IRGIB10B60KD1P

$1.45
  • Description:IGBT NPT 600V 16A TO220AB FP
  • Series:-

SKU:c1ae007107c7 Category: Brand:

  
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Product Detailed Parameters

  • Description:IGBT NPT 600V 16A TO220AB FP
  • Series:-
  • Mfr:Infineon Technologies
  • Package:Bulk,Tube
  • IGBT Type:NPT
  • Voltage - Collector Emitter Breakdown (Max):600 V
  • Current - Collector (Ic) (Max):16 A
  • Current - Collector Pulsed (Icm):32 A
  • Vce(on) (Max) @ Vge, Ic:2.1V @ 15V, 10A
  • Power - Max:44 W
  • Switching Energy:156µJ (on), 165µJ (off)
  • Input Type:Standard
  • Gate Charge:41 nC
  • Td (on/off) @ 25°C:25ns/180ns
  • Test Condition:400V, 10A, 50Ohm, 15V
  • Reverse Recovery Time (trr):79 ns
  • Operating Temperature:-55°C ~ 175°C (TJ)
  • Mounting Type:Through Hole
  • Package / Case:TO-220-3 Full Pack
  • Supplier Device Package:TO-220AB Full-Pak
  • Grade:-
  • Qualification:-

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IRGIB10B60KD1P

Overview

The IRGIB10B60KD1P is a single Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, featuring an integrated ultrafast soft recovery diode. It utilizes Non-Punch Through IGBT technology to achieve low VCE(on). The device supports a maximum collector-emitter voltage of 600V and a continuous collector current of 10A at 25°C. It offers a short circuit capability of 10µs and operates with a maximum junction temperature of 175°C. The component is housed in a TO-220FP package.

Feature Summary

  • Low VCE(on) achieved through Non-Punch Through IGBT technology
  • Ultrasoft diode reverse recovery characteristics for reduced EMI
  • Positive VCE(on) temperature coefficient ensuring stable thermal performance
  • 10µs short circuit capability for robust transient protection

Applications

  • Benchmark efficiency motor control systems
  • High-frequency switching power supplies
  • Industrial inverter circuits

Procurement Notes

Verify the exact suffix designation, as the provided model lacks the standard 'PBF' lead-free indicator found in official datasheets. Confirm availability status, as similar IRGIB series components may be discontinued or subject to limited supply constraints. Ensure the ordering part number matches the specific package and termination requirements of your design.

Selection Notes

Select this component for applications requiring rugged transient performance and excellent current sharing in parallel operations. The integrated ultrafast diode simplifies circuit design by eliminating external freewheeling diodes. Consider the 175°C maximum junction temperature rating for high-temperature environments where standard silicon limits might be exceeded.

Part Context

This IGBT belongs to the IRGIB family, characterized by low conduction losses and fast switching speeds. It is designed for medium-power applications where efficiency and reliability are critical. The integration of the anti-parallel diode reduces component count and board space compared to discrete solutions.

Replacement Considerations

Direct replacements include IRGIB10B60KD1PBF and IRGIB10B60KD1P. Verify pinout compatibility and thermal resistance values when substituting with other 600V 10A IGBTs from different manufacturers.

IRGIB10B60KD1PIRGIB10B60KD1P
$1.45
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