IRGP30B60KD-EP

Overview

The IRGP30B60KD-EP is an Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode. It utilizes Non Punch Through IGBT technology for low VCE(on) and features a TO-247AD package. Key electrical parameters include a collector-to-emitter voltage (VCES) of 600V, continuous collector current (IC) of 30A at TC=100°C, and pulsed collector current (ICM) of 120A. The device offers 10µs short circuit capability, a typical VCE(on) of 1.95V, and total gate charge (Qg) up to 153nC.

Feature Summary

• Non Punch Through IGBT technology ensures low saturation voltage and positive temperature coefficient for excellent current sharing in parallel operation.
• Integrated ultrafast soft recovery diode provides low forward voltage drop and ultrasoft reverse recovery characteristics to minimize EMI.
• Robust design includes a square Reverse Bias Safe Operating Area (RBSOA) and 10µs short circuit safe operating area (SCSOA).

Applications

• Motor control systems requiring benchmark efficiency
• Industrial power supplies and inverters
• High-frequency switching applications leveraging low EMI characteristics

Procurement Notes

Verify the complete ordering part number against official Infineon documentation before procurement. Confirm that the specific suffix matches the required lead-free and industrial qualification standards. Ensure thermal interface materials and mounting torque specifications align with the datasheet requirements for reliable operation within the specified junction temperature range.

Selection Notes

Select this component for applications demanding high ruggedness and efficient switching performance. The positive VCE(on) temperature coefficient facilitates stable parallel operation without active current balancing. Consider the 10µs short circuit capability for protection schemes and evaluate the soft recovery diode characteristics to manage voltage spikes in inductive load environments effectively.

Part Context

This device belongs to the IRGP series of insulated gate bipolar transistors designed for industrial markets. It combines high-voltage blocking capabilities with fast switching speeds. The integration of the anti-parallel diode allows for compact half-bridge configurations commonly used in motor drives and power conversion circuits where reliability under transient conditions is critical.

Replacement Considerations

Consult official cross-reference tools for verified substitutes. Ensure any replacement maintains compatible voltage ratings, current handling, and package dimensions such as TO-247AD.

FAQ

What is the short circuit withstand time of the IRGP30B60KD-EP?

The device has a confirmed short circuit capability of 10 microseconds.

Does the IRGP30B60KD-EP have a square RBSOA?

Yes, the datasheet specifies a full square Reverse Bias Safe Operating Area (RBSOA).

What type of diode is integrated with the IGBT in this module?

It integrates an ultrafast soft recovery diode characterized by low forward voltage and ultrasoft reverse recovery properties.