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Product Detailed Parameters
- Description：IGBT TRENCH 600V 48A TO-247AC
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：48 A
- Current - Collector Pulsed (Icm)：72 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 24A
- Power - Max：250 W
- Switching Energy：115µJ (on), 600µJ (off)
- Input Type：Standard
- Gate Charge：50 nC
- Td (on/off) @ 25°C：41ns/104ns
- Test Condition：400V, 24A, 10Ohm, 15V
- Reverse Recovery Time (trr)：89 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AC
- Grade：-
- Qualification：-
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Overview
The IRGP4062DPBF is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) Trench IGBT technology and is housed in a TO-247AC package. Key electrical parameters include a collector-to-emitter voltage (VCES) of 600V, a continuous collector current (IC) of 24A at TC=100°C, and a maximum junction temperature (TJ) of 175°C. The device features a typical saturation voltage (VCE(on)) of 1.65V at IC=24A and VGE=15V. It supports a short circuit withstand time (tSC) of at least 5μs.
Feature Summary
- Low VCE(on) Trench IGBT Technology
- Ultra fast soft Recovery Co-Pak Diode
- Positive VCE(on) Temperature co-efficient
- Square RBSOA
Applications
- Switching power supplies
- Motor drives
- Inverters
Procurement Notes
Verify the exact ordering suffix to confirm the specific package variant, as the base model number may correspond to different physical packages such as TO-220AB or TO-247AD. Ensure the component meets RoHS compliance requirements if applicable to your manufacturing process. Cross-reference the manufacturer's datasheet for the most current lifecycle status and recommended soldering profiles before finalizing procurement.
Selection Notes
Select this component based on its 600V blocking capability and 24A continuous current rating at elevated case temperatures. Consider the positive temperature coefficient of VCE(on) for applications requiring excellent current sharing in parallel operation. Evaluate the switching losses and gate charge characteristics against your specific drive circuit capabilities and thermal management constraints.
Part Context
This part belongs to the IRGP4062 series of high-speed IGBTs from Infineon. The 'D' in the model number typically denotes the inclusion of an integrated anti-parallel diode. The 'PbF' suffix indicates a lead-free package compliant with environmental directives. This series is designed for medium-power applications requiring rugged transient performance and low electromagnetic interference.
Replacement Considerations
IRGB4062DPBF
FAQ
What is the maximum short circuit withstand time for this IGBT?
The device supports a minimum short circuit withstand time (tSC) of 5 microseconds.
Does the IRGP4062DPBF have a negative or positive temperature coefficient for VCE(on)?
It features a positive VCE(on) temperature coefficient, which facilitates easy paralleling.
What type of recovery characteristic does the integrated diode possess?
The integrated diode has an ultrafast soft recovery characteristic.
