ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT TRENCH 600V 140A TO-247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：Trench
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：140 A
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：2.1V @ 15V, 75A
- Power - Max：454 W
- Switching Energy：2.47mJ (on), 2.16mJ (off)
- Input Type：Standard
- Gate Charge：150 nC
- Td (on/off) @ 25°C：50ns/200ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：155 ns
- Operating Temperature：-55°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
Download product information
Overview
The IRGP4066D-EPBF is an n-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes low VCE(on) Trench IGBT technology and is housed in a TO-247AD package. The device features a maximum collector-to-emitter voltage of 600V and a continuous collector current rating of 140A at 25°C case temperature. It supports a nominal current of 75A and a pulse collector current of 225A. The component operates within a junction temperature range of -55°C to +175°C and offers a short circuit safe operating area duration of at least 5μs.
Feature Summary
- Low saturation voltage achieved through Trench IGBT technology
- Integrated ultrafast soft recovery diode for reduced switching losses
- Robust transient performance with a square Reverse Bias Safe Operating Area
- Positive temperature coefficient for improved current sharing in parallel configurations
Applications
- Industrial motor drives
- Switch-mode power supplies
- High-frequency inverters
- Welding equipment
Procurement Notes
Verify the specific ordering suffix against official documentation to confirm the exact package variant and lead-free status. Ensure that the procurement channel provides valid traceability for industrial-grade components. Confirm that the received parts match the specified TO-247AD physical dimensions and pinout configuration before integration into the design.
Selection Notes
Select this component for applications requiring high efficiency across a wide range of operating frequencies. The combination of low conduction and switching losses makes it suitable for designs prioritizing thermal management. Consider the positive temperature coefficient when designing circuits that require multiple devices to operate in parallel to ensure balanced current distribution.
Part Context
This part belongs to the IRGP4066 series of insulated gate bipolar transistors from Infineon Technologies. It is designed specifically for the industrial market and is distinct from automotive-qualified variants which may carry different suffixes or specifications. The component represents a standard discrete power solution for medium-power switching applications.
Replacement Considerations
IRGP4066DPbF
FAQ
What is the maximum short circuit time for this device?
The device supports a short circuit withstand time of at least 5 microseconds under specified conditions.
Does the IRGP4066D-EPBF include an integrated diode?
Yes, it includes an integrated ultrafast soft recovery diode.
What is the recommended mounting torque for the package?
The recommended mounting torque is 10 lbf·in (1.1 N·m) for a 6-32 or M3 screw.
