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The IRGP4266-EPBF is an N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by International Rectifier, now part of Infineon Technologies. It features a breakdown voltage of 650V and a continuous collector current rating of 140A at 100°C. The device utilizes trench co-pack technology to achieve low saturation voltage characteristics. It is housed in a TO-247AD package with a thermal resistance from junction to case of 0.38°C/W. The component supports a maximum operating junction temperature of 175°C and includes an integrated anti-parallel diode.
Verify the specific suffix against official datasheets to confirm RoHS compliance and lead-free status. Ensure the ordering code matches the exact package variant required for your PCB footprint. Cross-reference manufacturer part numbers as ownership transferred from International Rectifier to Infineon Technologies.
Select this component for high-current applications requiring robust short-circuit withstand capability. Evaluate the thermal management requirements based on the specified junction-to-case thermal resistance. Confirm that the gate drive voltage levels are compatible with standard logic or dedicated driver outputs for optimal switching efficiency.
This device belongs to the IRGP series of super-fast IGBTs designed for high-frequency switching applications. The series emphasizes low conduction and switching losses through advanced wafer thinning techniques. It represents a transition period product where International Rectifier branding was used prior to full integration into Infineon's portfolio.
Direct substitutes include the IRGP4266D and IRGP4266DPBF variants within the same family. Verify pinout compatibility and thermal specifications when considering cross-manufacturer alternatives. Consult official Infineon documentation for updated equivalent part numbers reflecting current manufacturing lines.