IRGP4690DPBF

Overview

The IRGP4690DPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies, utilizing TRENCH IGBT technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 140 A at 25°C. The device operates within a temperature range of -55°C to +175°C and is housed in a TO-247AC-3 through-hole package. Key electrical parameters include a saturation voltage of 2.1 V, a power dissipation rating of 454 W, and a gate-emitter voltage limit of ±20 V.

Feature Summary

• Incorporates TRENCH IGBT wafer technology for optimized switching performance.
• Co-packaged with a soft-recovery anti-parallel diode.
• Designed for high short-circuit robustness.

Applications

• Uninterruptible Power Supplies (UPS)
• Solar Inverters
• Industrial Motor Drives
• Welding Equipment

Procurement Notes

Verify the manufacturer designation carefully, as the component is branded under Infineon Technologies despite the historical International Rectifier lineage. Confirm the specific suffix DPBF indicates lead-free compliance and tube packaging. Check current availability status, as this part may be discontinued or subject to supply constraints. Ensure the TO-247AC-3 package dimensions match your thermal management design requirements before procurement.

Selection Notes

Select this component for applications requiring 600 V blocking capability and high current handling up to 140 A. The integrated soft-recovery diode makes it suitable for hard-switching topologies where reverse recovery characteristics are critical. Consider the TO-247AC-3 package for through-hole mounting solutions that require robust mechanical stability and efficient heat sinking capabilities in industrial environments.

Part Context

This IGBT belongs to the IRGP series, which utilizes trench gate technology to achieve lower conduction losses and improved switching speeds compared to older planar designs. The series is engineered for medium-frequency switching applications, typically between 8 kHz and 30 kHz. The integration of the anti-parallel diode simplifies circuit design by providing a complete switching solution in a single package.

Replacement Considerations

Public confirmed substitute part numbers are not available in the provided documentation. Verify compatibility with existing driver circuits when considering alternative IGBTs from the same voltage and current class.