ChipApex | Global Electronic Components Supplier
SEARCH
Search Product
Search Post
— IC芯片 | 连接器 | 传感器 | 被动器件 —
Consult the customer manager about the wholesale price.
consultation hotline：86-132-6715-2157
email：[email protected]
Contact the product manager for consultation. One-stop consultation is available.
Do you want a lower wholesale price? Please send us your inquiry and we will reply immediately.
Product Detailed Parameters
- Description：IGBT NPT 600V 75A TO-247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：75 A
- Current - Collector Pulsed (Icm)：150 A
- Vce(on) (Max) @ Vge, Ic：2.85V @ 15V, 50A
- Power - Max：390 W
- Switching Energy：255µJ (on), 375µJ (off)
- Input Type：Standard
- Gate Charge：205 nC
- Td (on/off) @ 25°C：30ns/130ns
- Test Condition：390V, 33A, 3.3Ohm, 15V
- Reverse Recovery Time (trr)：42 ns
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-3P-3 Full Pack
- Supplier Device Package：TO-247AD
Download product information
Overview
The IRGP50B60PD1-EP is an IGBT module from Infineon Technologies, featuring a TO-247AD package. It operates with a maximum collector-emitter voltage of 600 V and a nominal collector current of 50 A at 25°C. The component utilizes TRENCHSTOP™ technology for optimized switching performance.
Feature Summary
- Incorporates TRENCHSTOP™ technology to enhance switching efficiency and reduce losses.
- Designed for robust operation in industrial power conversion applications.
Applications
- Industrial motor drives
- Uninterruptible power supplies (UPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix 'EP' against official documentation to confirm environmental compliance or special qualification status. Ensure the TO-247AD pinout matches the target circuit design. Cross-reference the datasheet version to validate thermal characteristics and absolute maximum ratings before integration.
Selection Notes
Select this component for applications requiring high voltage blocking capability and moderate current handling in a standard through-hole package. Evaluate thermal management requirements based on the specified power dissipation limits. Confirm compatibility with gate drive voltages and switching frequency constraints defined in the electrical characteristics.
Part Context
This part belongs to the IRGP series of insulated-gate bipolar transistors. It represents a discrete power semiconductor device designed for medium-power switching applications. The EP suffix typically denotes enhanced product specifications or environmental compliance within Infineon's portfolio.
Replacement Considerations
Consult official substitution guides for direct replacements. Verify pin compatibility and electrical parameters such as VCE(sat) and switching times when considering alternative IGBTs from other manufacturers or different Infineon series.
