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Product Detailed Parameters
- Description：IGBT 600V 140A TO-247AD
- Series：-
- Mfr：Infineon Technologies
- Package：Tube,Tube
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：140 A
- Current - Collector Pulsed (Icm)：225 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 75A
- Power - Max：483 W
- Switching Energy：2.4mJ (on), 2.2mJ (off)
- Input Type：Standard
- Gate Charge：140 nC
- Td (on/off) @ 25°C：85ns/222ns
- Test Condition：400V, 75A, 10Ohm, 15V
- Reverse Recovery Time (trr)：90 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-247-3
- Supplier Device Package：TO-247AD
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Overview
The IRGP6690D-EPBF is an n-channel Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, housed in a TO-247AD package. It features a collector-to-emitter breakdown voltage of 600V and supports continuous collector currents of 140A at 25°C case temperature and 90A at 100°C. The device exhibits a typical saturation voltage of 1.65V at 75A and includes a clamped inductive load current rating of 300A. Designed for high-power applications, it offers a maximum junction temperature of 175°C and complies with RoHS standards.
Feature Summary
- Low on-state voltage and switching losses to enhance efficiency across wide operating ranges
- Optimized integrated diode specifically designed for full bridge hard switch converters
- Square Reverse Bias Safe Operating Area (RBSOA) supporting rugged hard switching performance
- Positive VCE(on) temperature coefficient ensuring excellent current sharing during parallel operation
Applications
- Welding equipment
- H-Bridge converters
- Full bridge hard switch converters
Procurement Notes
Verify the specific ordering suffix against official manufacturer documentation to confirm the exact package variant, as the EPBF designation corresponds to the TO-247AD form factor. Confirm that the component meets the required industrial qualification levels and environmental compliance standards before finalizing procurement specifications.
Selection Notes
Select this component for designs requiring high current handling capabilities up to 140A and robust short-circuit protection schemes enabled by its 5µs Short Circuit Safe Operating Area. Ensure thermal management strategies account for the specified junction-to-case thermal resistance values to maintain safe operating temperatures under varying load conditions.
Part Context
This part belongs to the IGBT discrete semiconductor family manufactured by Infineon Technologies, formerly International Rectifier. It represents a specialized power transistor solution engineered for demanding industrial environments where high reliability and efficient power conversion are critical operational requirements.
Replacement Considerations
Consult official manufacturer substitution guides for verified equivalent components. Do not assume functional compatibility with other IGBT models without verifying electrical parameters and pin configurations.
FAQ
What is the maximum clamped inductive load current rating?
The maximum clamped inductive load current is rated at 300A when the gate-to-emitter voltage is 20V.
Does the device support parallel operation?
Yes, the positive VCE(on) temperature coefficient facilitates excellent current sharing when multiple units are operated in parallel.
What is the reverse recovery energy of the integrated diode?
The reverse recovery energy of the diode is typically 210µJ at a junction temperature of 175°C.
