IRGR4607DTRLPBF

Overview

The IRGR4607DTRLPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes Trench IGBT technology and is housed in a D-Pak (TO-252AA) surface-mount package. The device features a maximum collector-to-emitter voltage of 600 V and a continuous collector current of 11 A at 25°C case temperature. Key electrical parameters include a typical saturation voltage of 1.75 V at 4.0 A, a maximum gate-emitter voltage of ±20 V, and a power dissipation rating of 58 W at 25°C. The component supports a maximum junction temperature of 175°C.

Feature Summary

• Integrates an ultrafast soft recovery diode to minimize switching losses and electromagnetic interference.
• Features a square Reverse Bias Safe Operating Area (RBSOA) for robust performance under high-voltage stress.
• Provides a 5 µs Short Circuit Safe Operating Area (SCSOA) capability for enhanced system protection.
• Exhibits a positive VCE(ON) temperature coefficient to facilitate reliable current sharing in parallel configurations.

Applications

• Industrial motor drives
• Uninterruptible Power Supplies (UPS)
• Solar inverters
• Welding equipment

Procurement Notes

Verify the specific suffix 'DTRLPBF' corresponds to the Tape and Reel Left configuration containing 3000 units per reel, distinct from standard tape or right-reel variants. Confirm RoHS compliance status and lead-free material composition as specified in the datasheet qualification section. Ensure the ordering quantity aligns with the manufacturer's standard packaging requirements for this specific reel orientation.

Selection Notes

Select this component for applications requiring high efficiency across a wide load range due to low saturation voltage and switching losses. The 175°C maximum junction temperature rating allows for operation in thermally constrained environments. Verify that the required continuous collector current does not exceed 11 A at 25°C case temperature, or derate appropriately for higher thermal conditions.

Part Context

This part belongs to the IRGx4607DPbF family, which includes variants in D2Pak and TO-220AB packages. The base device shares identical electrical characteristics and trench technology across these form factors. The D-Pak variant specifically targets surface-mount assembly processes while maintaining the rugged transient performance and short-circuit tolerance defined by the International Rectifier design specifications.

Replacement Considerations

Direct pin-compatible substitutes within the same family include IRGS4607DPbF (D2Pak) and IRGB4607DPbF (TO-220AB). These alternatives share the same electrical ratings and functional block diagram but differ only in physical package dimensions and mounting style.

FAQ

What is the guaranteed short circuit withstand time for this IGBT?

The device provides a guaranteed Short Circuit Safe Operating Area (SCSOA) of 5 microseconds when operated at a collector-emitter voltage up to 600 V and a gate drive of 15 V.

Does the integrated diode exhibit hard or soft recovery characteristics?

The integrated diode features ultrafast soft recovery characteristics, which are designed to reduce reverse recovery energy and peak reverse recovery current during switching transitions.

How does the positive temperature coefficient of VCE(ON) benefit parallel operation?

The positive temperature coefficient ensures that as the junction temperature rises, the saturation voltage increases. This natural balancing effect prevents thermal runaway and promotes equal current sharing when multiple devices are connected in parallel.