IRGS15B60KDPBF

Overview

The IRGS15B60KDPBF is a single N-channel Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes Non Punch Through IGBT technology to achieve low VCE(sat) and operates at a collector-emitter voltage of 600V. The device supports a continuous collector current of 31A at 25°C case temperature and features a short circuit capability of 10µs. It is housed in a D2PAK (TO-262) package.

Feature Summary

• Low VCE(on) Non Punch Through IGBT Technology
• Ultrafast Soft Recovery Diode Characteristics
• Square Reverse Bias Safe Operating Area (RBSOA)
• Positive VCE(on) Temperature Coefficient

Applications

• Motor Control Circuits
• Switching Power Supplies
• Inverter Applications

Procurement Notes

Verify the specific package variant against the datasheet, as the 'S' suffix indicates the D2PAK form factor. Confirm lead-free compliance status for RoHS requirements. Ensure the component source matches Infineon or authorized distributors to avoid counterfeit parts. Check for obsolescence notices given the product's age.

Selection Notes

Select this component for applications requiring rugged transient performance and low EMI due to ultrasoft diode reverse recovery. Consider the positive VCE(on) temperature coefficient for excellent current sharing when paralleling devices. Evaluate thermal resistance values for heat sink design under expected load conditions.

Part Context

This part belongs to the IRGB/S/SL15B60KDPbF series, which includes variants in TO-220AB, D2PAK, and TO-262 packages. It is designed for industrial market qualification standards. The series emphasizes benchmark efficiency for motor control and robust operation under high stress conditions.

Replacement Considerations

Direct substitutes include other Infineon 600V IGBTs with similar current ratings and soft recovery diodes, such as the IRG4BC15UD-SPBF or IRGP20B60PDPBF_15, provided pinout and thermal characteristics are compatible.