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The IRGS4607DTRLPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by International Rectifier. It utilizes D2PAK surface-mount packaging and supports a collector-to-emitter voltage of 600 V. The device provides a continuous collector current of 11 A at 25°C case temperature and 7.0 A at 100°C. It features a maximum power dissipation of 58 W at 25°C and operates within a junction temperature range of -40°C to +175°C.
Verify the specific suffix 'DTRLPBF' corresponds to the Tape and Reel Left configuration containing 800 units per reel, as defined in the official ordering information table. Confirm that the component is lead-free compliant and meets RoHS standards. Ensure the procurement documentation explicitly references the International Rectifier datasheet revision dated November 14, 2014, to validate electrical parameters against the correct manufacturing batch specifications.
Select this component when designing circuits requiring a 600V rated IGBT with integrated fast recovery diodes in a compact surface-mount form factor. The device is suitable for applications demanding high reliability up to 175°C junction temperatures and rugged transient performance. Consider its thermal resistance characteristics and square Reverse Bias Safe Operating Area when calculating heat dissipation requirements for industrial motor drives or solar inverter topologies.
This part belongs to the IRGR/S/B4607DPbF family from International Rectifier, which includes variants in D-Pak, D2PAK, and TO-220AB packages. The IRGS4607DTRLPBF specifically denotes the D2PAK package variant supplied in a left-tape reel format. This family is engineered for high-efficiency power conversion systems, leveraging trench technology to minimize conduction and switching losses while maintaining robust short-circuit capabilities.
IRGS4607DPbF
The device has a short circuit safe operating area (SCSOA) rating of 5 microseconds at a junction temperature of 175°C.
Yes, it is an Insulated Gate Bipolar Transistor with an integrated ultrafast soft recovery diode.
The standard test conditions specify a gate-to-emitter voltage (VGE) of 15V for evaluating saturation voltage and switching characteristics.