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Product Detailed Parameters
- Description：IGBT 600V 47A 206W D2PAK
- Series：-
- Mfr：Infineon Technologies
- Package：Tape & Reel (TR)
- IGBT Type：-
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：47 A
- Current - Collector Pulsed (Icm)：54 A
- Vce(on) (Max) @ Vge, Ic：1.95V @ 15V, 18A
- Power - Max：206 W
- Switching Energy：95µJ (on), 350µJ (off)
- Input Type：Standard
- Gate Charge：35 nC
- Td (on/off) @ 25°C：40ns/105ns
- Test Condition：400V, 18A, 22Ohm, 15V
- Reverse Recovery Time (trr)：100 ns
- Operating Temperature：-40°C ~ 175°C (TJ)
- Mounting Type：Surface Mount
- Package / Case：TO-263-3, D2PAK (2 Leads + Tab), TO-263AB
- Supplier Device Package：D2PAK
- Grade：-
- Qualification：-
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Overview
The IRGS4630DTRRPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes TRENCHSTOP technology and is housed in a D2PAK surface-mount package. The device features a collector-emitter voltage rating of 600 V and a continuous collector current of 47 A at 25°C case temperature. Key electrical parameters include a typical saturation voltage of 1.65 V at 18 A, a maximum short-circuit withstand time of 5 µs, and a maximum operating junction temperature of 175°C.
Feature Summary
- Integrates an ultrafast soft recovery diode to minimize reverse recovery losses.
- Features a square Reverse Bias Safe Operating Area (RBSOA) for rugged hard switching performance.
- Provides a positive VCE(on) temperature coefficient to facilitate reliable parallel operation.
- Supports short circuit protection schemes with a 5 µs Short Circuit Safe Operating Area.
Applications
- Industrial motor drives
- Inverters
- Uninterruptible Power Supplies (UPS)
- Welding equipment
Procurement Notes
Verify the specific ordering suffix 'DTRRPBF' corresponds to the right-side tape and reel configuration on official manufacturer documentation. Confirm that the component meets RoHS compliance standards as specified in the datasheet. Ensure the procurement channel provides valid traceability for industrial qualification levels. Cross-reference the part number against the base model IRGS4630DPbF to confirm functional equivalence before finalizing orders.
Selection Notes
Select this component for applications requiring high efficiency across wide switching frequency ranges due to low conduction and switching losses. The D2PAK package is suitable for surface-mount designs where space constraints exist compared to through-hole alternatives. Consider the 175°C maximum junction temperature capability for thermal management in high-power density environments. Evaluate the 5 µs short-circuit tolerance when designing protection circuits for inductive loads.
Part Context
This part belongs to the IRGB/IB/P/S4630D/EPbF family of IGBTs from Infineon Technologies. It shares core electrical characteristics with other packages in the series, such as TO-220AB and TO-247AC variants. The D2PAK version specifically adapts the die for surface-mount assembly while maintaining the same TRENCHSTOP performance metrics. It serves as a direct functional equivalent to the leaded versions regarding electrical behavior.
Replacement Considerations
IRGS4630DPbF
FAQ
What is the maximum short-circuit withstand time for this IGBT?
The device supports a short-circuit withstand time of 5 µs, enabling the implementation of short-circuit protection schemes.
Does the IRGS4630DTRRPBF include an anti-parallel diode?
Yes, it integrates an ultrafast soft recovery diode to handle reverse current flow efficiently.
What is the recommended gate-to-emitter voltage range?
The continuous gate-to-emitter voltage rating is ±20 V, with typical switching operations conducted at +15 V.
