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The IRGS4640DTRRPBF is a surface-mount Insulated Gate Bipolar Transistor (IGBT) with an integrated ultrafast soft recovery diode, manufactured by Infineon Technologies. It utilizes the D2PAK package and features a collector-to-emitter voltage rating of 600 V. The device supports a continuous collector current of 65 A at a case temperature of 25°C and handles a pulse collector current of 72 A. Maximum power dissipation reaches 250 W at 25°C. The component operates within a junction temperature range of -55°C to +175°C.
Verify that the ordering suffix TRRPBF corresponds specifically to the right-side tape and reel packaging format as defined in the official datasheet. Confirm the component meets RoHS compliance standards and Industrial qualification levels per JEDEC JESD47F requirements before finalizing procurement specifications.
Select this component when designing circuits requiring a 600 V IGBT with integrated fast recovery diodes in a surface-mount D2PAK footprint. Ensure thermal management strategies accommodate the specified junction-to-case thermal resistance values. Validate gate drive voltages against the absolute maximum ratings to maintain reliable operation under varying load conditions.
This part belongs to the IRGS/SL/B/P4640D family of IGBTs from Infineon Technologies. It shares core electrical characteristics with variants such as the IRGS4640DPbF (tube), IRGB4640DPbF (TO-220AB), and IRGP4640DPbF (TO-247AC). The primary distinction lies in the physical package type and the specific reel configuration indicated by the suffix.
Direct substitutes include other parts within the same base number family, such as IRGS4640DPbF or IRGS4640DTRLPbF, provided the package and reel orientation match the design constraints. Cross-package replacements require verifying pinout compatibility and thermal performance differences between D2PAK, TO-220, and TO-247 form factors.
The device supports a short circuit duration of up to 5 microseconds under specified conditions.
Yes, it integrates an ultrafast soft recovery diode alongside the IGBT structure.
The component functions reliably within a junction temperature range of -55°C to +175°C.