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The IRGS4B60KD1TRLP is a single N-channel Insulated Gate Bipolar Transistor (IGBT) from Infineon Technologies, utilizing TRENCHSTOP technology. It features a maximum collector-emitter voltage of 600 V and a continuous collector current of 12 A at 25°C. The device operates within a junction temperature range of -55°C to +175°C and has a power dissipation rating of 63 W. Packaged in a D2PAK-3 (TO-263-3) surface-mount housing, it offers low saturation voltage characteristics suitable for efficient power switching applications.
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Select this component for applications requiring robust 600V blocking capability with moderate current handling. Consider the D2PAK package for its balance of thermal performance and mounting convenience. Evaluate gate drive requirements against the specified threshold voltages. Compare total system losses using the provided saturation voltage and switching energy data points.
This IGBT belongs to the RC series within Infineon's broader portfolio of discrete power semiconductors. It represents a standard solution for general-purpose power switching where reliability and cost-effectiveness are prioritized. The device complements complementary MOSFETs and other IGBT variants in mixed-signal power conversion designs.
Public confirmed substitute part numbers: IRGS4B60KD1PBF.