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Product Detailed Parameters
- Description：IGBT NPT 600V 31A TO-262
- Series：-
- Mfr：Infineon Technologies
- Package：Bulk
- IGBT Type：NPT
- Voltage - Collector Emitter Breakdown (Max)：600 V
- Current - Collector (Ic) (Max)：31 A
- Current - Collector Pulsed (Icm)：62 A
- Vce(on) (Max) @ Vge, Ic：2.2V @ 15V, 15A
- Power - Max：208 W
- Switching Energy：220µJ (on), 340µJ (off)
- Input Type：Standard
- Gate Charge：56 nC
- Td (on/off) @ 25°C：34ns/184ns
- Test Condition：400V, 15A, 22Ohm, 15V
- Reverse Recovery Time (trr)：-
- Operating Temperature：-55°C ~ 150°C (TJ)
- Mounting Type：Through Hole
- Package / Case：TO-262-3 Long Leads, I2PAK, TO-262AA
- Supplier Device Package：TO-262
- Grade：-
- Qualification：-
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Overview
The IRGSL15B60KDPBF is a single N-channel Insulated Gate Bipolar Transistor (IGBT) manufactured by Infineon Technologies. It utilizes TRENCHSTOP™ technology and is housed in a TO-220FP-3 package for through-hole mounting. The device supports a maximum collector-emitter voltage of 600 V and a continuous collector current of 15 A at 25°C. Key electrical parameters include a saturation voltage of 1.8 V, a gate-emitter voltage range of -20 V to +20 V, and a power dissipation rating of 47 W. It operates within a temperature range of -55°C to +175°C.
Feature Summary
- Incorporates TRENCHSTOP™ technology for optimized switching performance and low conduction losses.
- Designed with a soft-recovery integrated anti-parallel diode to minimize reverse recovery effects.
- Features a robust TO-220FP-3 package suitable for high-power thermal management applications.
Applications
- Motor drive inverters
- Switched-mode power supplies (SMPS)
- High-frequency welding equipment
Procurement Notes
Verify the specific suffix against official Infineon documentation to confirm exact specifications, as variations may exist. Confirm RoHS compliance status directly from the manufacturer's datasheet or material declaration before integration into regulated products.
Selection Notes
Select this component for designs requiring a balance between low on-state voltage and fast switching speeds. Ensure the gate driver circuit accommodates the specified ±20 V limits and that the PCB layout supports the thermal requirements of the TO-220FP-3 package under expected load conditions.
Part Context
This IGBT belongs to Infineon’s discrete power transistor portfolio, specifically leveraging TRENCHSTOP™ architecture. It is distinct from MOSFETs by offering lower conduction losses at higher voltages, making it suitable for medium-power switching applications where efficiency is critical.
Replacement Considerations
Consult Infineon’s official cross-reference tools for verified substitutes. When evaluating alternatives, match the 600 V rating, 15 A current capacity, TO-220FP-3 footprint, and TRENCHSTOP™ characteristics to ensure functional compatibility without redesigning the gate drive or thermal system.
