IRL3103D1

Single FETs, MOSFETs Overview

The IRL3103D1 is a single N-channel HEXFET power MOSFET manufactured by Infineon Technologies, housed in a TO-220AB through-hole package. It features a maximum drain-source voltage (VDS) of 30 V and a continuous drain current (ID) of 64 A at 25°C. The device exhibits a maximum on-resistance (RDS(on)) of 12 mΩ at 10 V gate drive and 16 mΩ at 4.5 V gate drive. Key electrical parameters include a gate charge (QG) of 22 nC typical at 4.5 V, a gate-drain charge (Qgd) of 11.3 nC, and a thermal resistance from junction to case (RthJC) of 1.8 K/W. The component supports a maximum junction temperature of 175°C and a maximum gate-source voltage of 16 V.

Single FETs, MOSFETs Feature Summary

• Logic-level compatible gate structure enabling efficient drive from standard logic voltages.
• Low on-state resistance optimized for high-efficiency power switching applications.
• Robust avalanche energy capability designed for inductive load switching scenarios.

Single FETs, MOSFETs Applications

• DC-DC converter circuits
• Motor control systems
• Load switch implementations

Single FETs, MOSFETs Procurement Notes

Verify the specific suffix 'D1' against official Infineon documentation to confirm exact marking and tape-and-reel specifications if applicable, as standard listings often reference the base IRL3103 part number. Ensure the procurement channel provides valid traceability and authenticity certificates consistent with original manufacturer standards.

Single FETs, MOSFETs Selection Notes

Select this component when a low-voltage, high-current N-channel MOSFET is required for through-hole assembly. The 30V rating and 64A current capacity suit applications needing robust performance with logic-level gate drive compatibility. Evaluate thermal management requirements based on the 1.8 K/W junction-to-case resistance for your specific power dissipation needs.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs from Infineon Technologies. The IRL3103 series is characterized by its low on-resistance and fast switching speeds, making it suitable for various power conversion tasks. The TO-220AB package provides a reliable mechanical solution for higher power dissipation compared to surface-mount alternatives.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools for verified substitutes. Potential equivalents may include other 30V N-channel MOSFETs with similar current ratings and RDS(on) values, such as the IRL3103TR or IRL3102 variants, depending on package constraints.

Single FETs, MOSFETs FAQ

What is the maximum gate-source voltage for the IRL3103D1?

The maximum gate-source voltage (VGS) is specified as 16 V.

Is the IRL3103D1 suitable for logic-level driving?

Yes, the device features a logic-level gate structure, allowing it to be driven effectively by standard logic voltages such as 4.5 V or 5 V.