IRL3103SPBF

Single FETs, MOSFETs Overview

The IRL3103SPbF is a HEXFET power MOSFET featuring a D2Pak surface-mount package. It supports a maximum drain-source voltage of 30 V and continuous drain current of 64 A at 25°C case temperature. The device exhibits a typical on-resistance of 12 mΩ at 10 V gate drive and 34 A, with a threshold voltage range of 1.0 to 1.6 V. Key electrical parameters include a total gate charge of 33 nC, a single-pulse avalanche energy rating of 1320 mJ, and a junction-to-case thermal resistance of 1.6 °C/W. Operating temperatures span from -55°C to +175°C.

Single FETs, MOSFETs Feature Summary

• Advanced processing technology enables extremely low on-resistance per silicon area for high efficiency.
• D2Pak surface mount package provides the highest power capability and lowest on-resistance in its class.
• Fully rated for repetitive avalanche energy and ruggedized for reliable operation under stress.
• Logic level compatible with fast switching speeds suitable for various power applications.

Single FETs, MOSFETs Applications

• High-current DC-DC converter circuits
• Motor control systems requiring logic-level drive
• Power management modules utilizing surface mount assembly

Single FETs, MOSFETs Procurement Notes

Verify the specific ordering suffix against official Infineon documentation to confirm package type and lead-free status. Ensure the component matches the required thermal and electrical specifications for the target application environment. Cross-reference datasheet revisions to confirm parameter consistency before finalizing procurement orders.

Single FETs, MOSFETs Selection Notes

Select this component when a 30 V N-channel MOSFET with high current handling and logic-level compatibility is required. The D2Pak package is optimal for surface-mount designs needing robust thermal dissipation. Evaluate the 12 mΩ on-resistance against system conduction loss requirements and verify that the 64 A continuous current rating meets peak load demands.

Single FETs, MOSFETs Part Context

This part belongs to the HEXFET family of power MOSFETs manufactured by Infineon Technologies. It represents an evolution of International Rectifier's advanced process technology, designed to minimize on-resistance while maintaining high reliability. The device is intended for industrial market applications requiring efficient power switching solutions.

Single FETs, MOSFETs Replacement Considerations

Consult official cross-reference tools or manufacturer databases for verified substitutes. Ensure any replacement maintains equivalent voltage, current, and thermal ratings. Verify pinout compatibility and package dimensions to ensure mechanical fit without redesigning the PCB footprint.

Single FETs, MOSFETs FAQ

What is the maximum single-pulse avalanche energy rating?

The IRL3103SPbF has a maximum single-pulse avalanche energy rating of 1320 mJ when tested with an inductance of 0.22 mH and a current of 34 A.

Is the device fully avalanche rated?

Yes, the datasheet explicitly states that the device is fully avalanche rated, supporting both unclamped inductive switching (UIS) and repetitive avalanche conditions within specified limits.

What is the internal source inductance value?

The internal source inductance (LS) is typically 7.5 nH, which influences switching performance and should be considered in high-speed circuit layouts.